A New Model Employing Fermi-Level Integration Limits to Correct Systematic Errors in the Extraction of Semimetal Carrier Densities and Mobilities.
4 affiliations
- 1School of Physics and Astronomy, University of Birmingham, BirminghamB15 2TT, United Kingdom.
- 2School of Engineering and Materials Science, Queen Mary University of London, LondonE1 4NS, United Kingdom.
- 3Department of Materials Science, Montanuniversität Leoben, Leoben8700, Austria.
- 4School of Physical and Chemical Sciences, Queen Mary University of London, LondonE1 4NS, United Kingdom.
Abstract
We demonstrate that the accepted model for transport in semimetals gives incorrect results and introduce a corrected scheme that reproduces experimental data. Carrier densities in semimetals have been systematically overestimated by factors of 2-5 throughout the literature, leading to underestimated mobilities by the same factor. This resolves the long-standing puzzle of why nominally identical graphene samples show order-of-magnitude mobility variations. By integrating the density of states from the Fermi level rather than from band edges, we reproduce the full evolution of the Hall coefficient and longitudinal resistance across five independent graphene data sets with zero fitting parameters. A double-normalized polar representation reveals a decisive signature: a smooth arc that experimental data match, while no realistic density of states or mobility rescues the band-edge model. Our Fermi model provides a parameter-free, temperature-robust description with immediate implications for reevaluating mobility benchmarks across the 2D materials literature.
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BibTeX
@article{sun2026model,
title = {{A New Model Employing Fermi-Level Integration Limits to Correct Systematic Errors in the Extraction of Semimetal Carrier Densities and Mobilities.}},
author = {Y W Sun and D Holec and O Fenwick and M J Coak and D G Papageorgiou and C J Humphreys and D J Dunstan},
journal = {Nano letters},
year = {2026},
month = sep,
doi = {10.1021/acs.nanolett.6c02845},
url = {https://europepmc.org/article/MED/42915352},
note = {CC BY},
}
RIS
TY - JOUR
TI - A New Model Employing Fermi-Level Integration Limits to Correct Systematic Errors in the Extraction of Semimetal Carrier Densities and Mobilities.
AU - Y W Sun
AU - D Holec
AU - O Fenwick
AU - M J Coak
AU - D G Papageorgiou
AU - C J Humphreys
AU - D J Dunstan
PY - 2026
DA - 2026/09/01
JO - Nano letters
DO - 10.1021/acs.nanolett.6c02845
UR - https://europepmc.org/article/MED/42915352
AB - We demonstrate that the accepted model for transport in semimetals gives incorrect results and introduce a corrected scheme that reproduces experimental data. Carrier densities in semimetals have been systematically overestimated by factors of 2-5 throughout the literature, leading to underestimated mobilities by the same factor. This resolves the long-standing puzzle of why nominally identical graphene samples show order-of-magnitude mobility variations. By integrating the density of states from the Fermi level rather than from band edges, we reproduce the full evolution of the Hall coefficient and longitudinal resistance across five independent graphene data sets with zero fitting parameters. A double-normalized polar representation reveals a decisive signature: a smooth arc that experimental data match, while no realistic density of states or mobility rescues the band-edge model. Our Fermi model provides a parameter-free, temperature-robust description with immediate implications for reevaluating mobility benchmarks across the 2D materials literature.
SN - 1530-6984
SN - 1530-6992
ER -