Bias-Modulated Electronically-Tunable Optoelectronic Chromatic Dispersion in Ge PN Photodiodes
Abstract
Optoelectronic Chromatic Dispersion (OED) is a source of significant wavelength-dependent current in photodiodes, offering a pathway to computational spectroscopy in a photodiode-only platform without the need for additional optical or mechanical components. Previous studies have activated OED through light modulation. Here, we present a theoretical and experimental investigation of bias-modulated OED in the C- and L-bands in a Ge PN photodiode, where the applied bias voltage is modulated sinusoidally, and the optical illumination is held constant. The spectral response is due to wavelength-dependent optical absorption together with bias-dependent competition between carrier drift, displacement current, and mobile-charge screening. With the RF phase-shift technique, the maximum measured OED sensitivity is +4.13 deg/nm in the L-band, significantly larger than that of light-modulated OED in Ge. The 15 mdeg phase-noise floor yields a spectral resolution of 3.6 pm. These results establish bm-OED as an electronically reconfigurable dispersive mechanism for applications in chip-scale computational spectrometers, photonic integrated circuits (PICs), on-chip RF photonics, and wavelength-division multiplexing.
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BibTeX
@misc{saint2026biasmodulated,
title = {{Bias-Modulated Electronically-Tunable Optoelectronic Chromatic Dispersion in Ge PN Photodiodes}},
author = {Uttama Kumar Saint and Ziv Glasser and Egor Liokumovitch and Endalamaw Ewnu Kassa and Asaf Albo and Shmuel Sternklar},
howpublished = {arXiv},
year = {2026},
month = oct,
doi = {10.48550/arxiv.2610.20039},
eprint = {2610.20039},
archivePrefix = {arXiv},
url = {https://arxiv.org/abs/2610.20039},
note = {CC BY 4.0},
}
RIS
TY - UNPB
TI - Bias-Modulated Electronically-Tunable Optoelectronic Chromatic Dispersion in Ge PN Photodiodes
AU - Uttama Kumar Saint
AU - Ziv Glasser
AU - Egor Liokumovitch
AU - Endalamaw Ewnu Kassa
AU - Asaf Albo
AU - Shmuel Sternklar
PY - 2026
DA - 2026/10/21
PB - arXiv
DO - 10.48550/arxiv.2610.20039
UR - https://arxiv.org/abs/2610.20039
AB - Optoelectronic Chromatic Dispersion (OED) is a source of significant wavelength-dependent current in photodiodes, offering a pathway to computational spectroscopy in a photodiode-only platform without the need for additional optical or mechanical components. Previous studies have activated OED through light modulation. Here, we present a theoretical and experimental investigation of bias-modulated OED in the C- and L-bands in a Ge PN photodiode, where the applied bias voltage is modulated sinusoidally, and the optical illumination is held constant. The spectral response is due to wavelength-dependent optical absorption together with bias-dependent competition between carrier drift, displacement current, and mobile-charge screening. With the RF phase-shift technique, the maximum measured OED sensitivity is +4.13 deg/nm in the L-band, significantly larger than that of light-modulated OED in Ge. The 15 mdeg phase-noise floor yields a spectral resolution of 3.6 pm. These results establish bm-OED as an electronically reconfigurable dispersive mechanism for applications in chip-scale computational spectrometers, photonic integrated circuits (PICs), on-chip RF photonics, and wavelength-division multiplexing.
ER -