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PreprintCC BY 4.0arXiv

Photonic Crystal Integrated Graphene-Silicon Schottky Diodes for Resonant Infrared Photodetection

  • Lorenzo Pettorosso
  • Michael Horodynski
  • Dmitry K. Polyushkin
  • Thomas Mueller
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Abstract

Narrowband infrared (IR) photodetection has become a critical technology for the next generation of smart low-power photodetectors. In this work, we present a device based on a graphene-silicon Schottky junction with narrowband response in the short-wave IR (SWIR) regime. Integrating a photonic crystal (PhC) slab in the device enables a wavelength dependant tailoring of graphene absorption. The devices were characterized by photocurrent measurement, which was enhanced more than two orders of magnitude by the PhC integration. The sharp enhancements obtained can also be predicted by numerical simulation. This approach offers a highly scalable, tunable, CMOS-compatible architecture for narrowband IR photodetection, paving the way for next-generation, low-power IR sensors.

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Cite

BibTeXRIS
BibTeX
@misc{pettorosso2026photonic,
  title = {{Photonic Crystal Integrated Graphene-Silicon Schottky Diodes for Resonant Infrared Photodetection}},
  author = {Lorenzo Pettorosso and Michael Horodynski and Dmitry K. Polyushkin and Thomas Mueller},
  howpublished = {arXiv},
  year = {2026},
  month = oct,
  doi = {10.48550/arxiv.2610.41701},
  eprint = {2610.41701},
  archivePrefix = {arXiv},
  url = {https://arxiv.org/abs/2610.41701},
  note = {CC BY 4.0},
}
RIS
TY  - UNPB
TI  - Photonic Crystal Integrated Graphene-Silicon Schottky Diodes for Resonant Infrared Photodetection
AU  - Lorenzo Pettorosso
AU  - Michael Horodynski
AU  - Dmitry K. Polyushkin
AU  - Thomas Mueller
PY  - 2026
DA  - 2026/10/30
PB  - arXiv
DO  - 10.48550/arxiv.2610.41701
UR  - https://arxiv.org/abs/2610.41701
AB  - Narrowband infrared (IR) photodetection has become a critical technology for the next generation of smart low-power photodetectors. In this work, we present a device based on a graphene-silicon Schottky junction with narrowband response in the short-wave IR (SWIR) regime. Integrating a photonic crystal (PhC) slab in the device enables a wavelength dependant tailoring of graphene absorption. The devices were characterized by photocurrent measurement, which was enhanced more than two orders of magnitude by the PhC integration. The sharp enhancements obtained can also be predicted by numerical simulation. This approach offers a highly scalable, tunable, CMOS-compatible architecture for narrowband IR photodetection, paving the way for next-generation, low-power IR sensors.
ER  -