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PreprintarXiv licencearXiv

The Extended Diode Equation

  • Jianhong Yang
  • Gonghao Sun
  • Tinglan Li
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Abstract

For more than 75 years, the p-n junction current-voltage characteristic has been derived by treating majority carriers as an inert background and conflating the junction voltage with the applied bias. Here we show that the base electric field, generated by the coupling of excess majority and minority carriers, fundamentally alters the internal potential distribution. This self-consistent framework yields a closed-form extended diode equation that reproduces the high-injection roll-off without invoking an external series resistance, thereby eliminating an empirical patch that has persisted in the classical theory.

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Cite

BibTeXRIS
BibTeX
@misc{yang2026extended,
  title = {{The Extended Diode Equation}},
  author = {Jianhong Yang and Gonghao Sun and Tinglan Li},
  howpublished = {arXiv},
  year = {2026},
  month = oct,
  doi = {10.48550/arxiv.2610.32090},
  eprint = {2610.32090},
  archivePrefix = {arXiv},
  url = {https://arxiv.org/abs/2610.32090},
}
RIS
TY  - UNPB
TI  - The Extended Diode Equation
AU  - Jianhong Yang
AU  - Gonghao Sun
AU  - Tinglan Li
PY  - 2026
DA  - 2026/10/23
PB  - arXiv
DO  - 10.48550/arxiv.2610.32090
UR  - https://arxiv.org/abs/2610.32090
AB  - For more than 75 years, the p-n junction current-voltage characteristic has been derived by treating majority carriers as an inert background and conflating the junction voltage with the applied bias. Here we show that the base electric field, generated by the coupling of excess majority and minority carriers, fundamentally alters the internal potential distribution. This self-consistent framework yields a closed-form extended diode equation that reproduces the high-injection roll-off without invoking an external series resistance, thereby eliminating an empirical patch that has persisted in the classical theory.
ER  -