PreprintCC BY 4.0arXiv
On quantum confinement without barriers
Abstract
Usually in semiconductor heterostructures, such as quantum wells, the quantum confinement is realized by means of heterobarriers, which are simply the band offsets in adjacent materials. Here the arguments are provided, that the energy dispersions in materials (in simple case determined by effective masses) are important as well. Using a simple model system, such as quantum well with an additional heterojunction, it is shown the predominant localization of the carrier density in the regions with higher effective mass. The possibility of different spatial localization of wave function for different subbands is predicted. This can be applied in semiconductor structures such as quantum cascade lasers.
Related
- Confinement in the three-state Potts quantum spin chain in extreme ferromagnetic limit
- A continuous confinement-deconfinement transition in a triangular quantum magnet
- Localized orbitals and tunnel couplings from general confinement potentials in gate-defined quantum-dot arrays
- Quantum computing for plasma physics in magnetic-confinement fusion
- Collective excitation-mediated transport in nanoscale Josephson junctions that exhibit quantum confinement
BibTeX
@misc{kokurin2026quantum,
title = {{On quantum confinement without barriers}},
author = {I. A. Kokurin},
howpublished = {arXiv},
year = {2026},
month = sep,
doi = {10.48550/arxiv.2609.27054},
eprint = {2609.27054},
archivePrefix = {arXiv},
url = {https://arxiv.org/abs/2609.27054},
note = {CC BY 4.0},
}
RIS
TY - UNPB
TI - On quantum confinement without barriers
AU - I. A. Kokurin
PY - 2026
DA - 2026/09/22
PB - arXiv
DO - 10.48550/arxiv.2609.27054
UR - https://arxiv.org/abs/2609.27054
AB - Usually in semiconductor heterostructures, such as quantum wells, the quantum confinement is realized by means of heterobarriers, which are simply the band offsets in adjacent materials. Here the arguments are provided, that the energy dispersions in materials (in simple case determined by effective masses) are important as well. Using a simple model system, such as quantum well with an additional heterojunction, it is shown the predominant localization of the carrier density in the regions with higher effective mass. The possibility of different spatial localization of wave function for different subbands is predicted. This can be applied in semiconductor structures such as quantum cascade lasers.
ER -