Porous Ultralow‐κ sp2‐Bonded Boron Nitride Thin Films as Copper Diffusion Barriers
- 1State Key Laboratory of High Pressure and Superhard Materials College of Physics Jilin University Changchun People's Republic of China
- 2School of Integrated Circuits Dalian University of Technology Dalian People's Republic of China
- 3Shanghai Synchrotron Radiation Facility Shanghai Advanced Research Institute Chinese Academy of Sciences Shanghai People's Republic of China
Abstract
Dielectric materials with low dielectric constant (κ < 2) are highly needed to overcome a series of problems caused by the decreasing size of microelectronics. An effective way to reduce dielectric constant is introducing void structure in dielectric materials, however challenging in mechanical strength and wetting properties. Herein, porous sp2‐bonded boron nitride (BN) films are directly grown on Si substrates via radio frequency magnetron sputtering. The Guinier plot analysis of grazing incidence small‐angle X‐ray scattering spectra and electron microscopy confirms the pore size of ∼1.85 nm. The porous BN (p‐BN) films show a band gap of ∼5.88 eV and a hydrophobic surface, ensuring the stability of dielectric properties. P‐BN films exhibit an ultralow‐κ of 1.77 at 100 kHz. These porous ultralow‐κ BN films are electrically robust and mechanically stable superior to the previously reported porous dielectrics and close to the referent dense amorphous BN and hexagonal BN. Additionally, the p‐BN films demonstrate notable diffusion barrier capability, effectively blocking Cu diffusion even with a thickness as low as 3 nm. This work provides a viable approach towards the controlled synthesis of porous ultralow‐κ BN films as versatile dielectrics for transistor gate barriers, passivation layers, and capacitor spacers in high‐performance electronics.
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BibTeX
@article{liu2026porous,
title = {{Porous Ultralow‐κ sp2‐Bonded Boron Nitride Thin Films as Copper Diffusion Barriers}},
author = {Caiyun Liu and Ze Long and Zhongyuan Han and Yingying Guo and Yuning Ding and Tianhao Guo and Yuting Tang and Runzhi An and Haoran Ma and Jishan Liu and Hongwei Liang and Hong Yin},
journal = {Advanced Science},
year = {2026},
month = jul,
doi = {10.1002/advs.76923},
url = {https://doi.org/10.1002/advs.76923},
note = {CC BY 4.0},
}
RIS
TY - JOUR
TI - Porous Ultralow‐κ sp2‐Bonded Boron Nitride Thin Films as Copper Diffusion Barriers
AU - Caiyun Liu
AU - Ze Long
AU - Zhongyuan Han
AU - Yingying Guo
AU - Yuning Ding
AU - Tianhao Guo
AU - Yuting Tang
AU - Runzhi An
AU - Haoran Ma
AU - Jishan Liu
AU - Hongwei Liang
AU - Hong Yin
PY - 2026
DA - 2026/07/30
JO - Advanced Science
DO - 10.1002/advs.76923
UR - https://doi.org/10.1002/advs.76923
AB - Dielectric materials with low dielectric constant (κ < 2) are highly needed to overcome a series of problems caused by the decreasing size of microelectronics. An effective way to reduce dielectric constant is introducing void structure in dielectric materials, however challenging in mechanical strength and wetting properties. Herein, porous sp2‐bonded boron nitride (BN) films are directly grown on Si substrates via radio frequency magnetron sputtering. The Guinier plot analysis of grazing incidence small‐angle X‐ray scattering spectra and electron microscopy confirms the pore size of ∼1.85 nm. The porous BN (p‐BN) films show a band gap of ∼5.88 eV and a hydrophobic surface, ensuring the stability of dielectric properties. P‐BN films exhibit an ultralow‐κ of 1.77 at 100 kHz. These porous ultralow‐κ BN films are electrically robust and mechanically stable superior to the previously reported porous dielectrics and close to the referent dense amorphous BN and hexagonal BN. Additionally, the p‐BN films demonstrate notable diffusion barrier capability, effectively blocking Cu diffusion even with a thickness as low as 3 nm. This work provides a viable approach towards the controlled synthesis of porous ultralow‐κ BN films as versatile dielectrics for transistor gate barriers, passivation layers, and capacitor spacers in high‐performance electronics.
SN - 2198-3844
ER -