MoS 2 Memristors Made by Liquid–Liquid Interface Assembly and Ultraprecise Metal Printing
Abstract
A cleanroom‐free process was developed for the fabrication of ultralow‐power resistive switching devices. Sub‐micron‐thick silver (Ag) electrodes are printed by XTPL's Ultraprecise Dispensing technology in a fully additive process. Two‐layer molybdenum disulfide (MoS 2 ) is used as the active layer, which was prepared and deposited by the Langmuir‐Schaefer technique. Devices with 30 × 30 µm 2 with volatile and non‐volatile operation were produced. These exhibit SET and RESET voltages of 0.32 ± 0.09 V and −0.29 ± 0.09 V, respectively, a memory window up to 10 6 , an endurance of 300 cycles achieved by voltage sweep, and stable operation under vacuum. The devices can retain the state for over 10 5 s. By employing high‐resolution printing techniques and an ultra‐conformable liquid‐based two‐dimensional materials deposition process, cost‐efficient and high‐performance resistive switching devices were fabricated for next‐generation computation and communication.
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BibTeX
@article{franco2026memristors,
title = {{MoS 2 Memristors Made by Liquid–Liquid Interface Assembly and Ultraprecise Metal Printing}},
author = {Miguel Franco and Daniel Neves and Dorina Papanastasiou and Jonas Deuermeier and Tomás Calmeiro and Tomás Mingates and Adam Kelly and Joseph Neilson and Eugénie Martinez and Zdeněk Sofer and Elvira Fortunato and Rodrigo Martins and Emanuel Carlos and Asal Kiazadeh},
journal = {Advanced Electronic Materials},
year = {2026},
month = oct,
doi = {10.1002/aelm.70582},
url = {https://hal.science/hal-05799025v1},
note = {CC BY},
}
RIS
TY - JOUR
TI - MoS 2 Memristors Made by Liquid–Liquid Interface Assembly and Ultraprecise Metal Printing
AU - Miguel Franco
AU - Daniel Neves
AU - Dorina Papanastasiou
AU - Jonas Deuermeier
AU - Tomás Calmeiro
AU - Tomás Mingates
AU - Adam Kelly
AU - Joseph Neilson
AU - Eugénie Martinez
AU - Zdeněk Sofer
AU - Elvira Fortunato
AU - Rodrigo Martins
AU - Emanuel Carlos
AU - Asal Kiazadeh
PY - 2026
DA - 2026/10/12
JO - Advanced Electronic Materials
DO - 10.1002/aelm.70582
UR - https://hal.science/hal-05799025v1
AB - A cleanroom‐free process was developed for the fabrication of ultralow‐power resistive switching devices. Sub‐micron‐thick silver (Ag) electrodes are printed by XTPL's Ultraprecise Dispensing technology in a fully additive process. Two‐layer molybdenum disulfide (MoS 2 ) is used as the active layer, which was prepared and deposited by the Langmuir‐Schaefer technique. Devices with 30 × 30 µm 2 with volatile and non‐volatile operation were produced. These exhibit SET and RESET voltages of 0.32 ± 0.09 V and −0.29 ± 0.09 V, respectively, a memory window up to 10 6 , an endurance of 300 cycles achieved by voltage sweep, and stable operation under vacuum. The devices can retain the state for over 10 5 s. By employing high‐resolution printing techniques and an ultra‐conformable liquid‐based two‐dimensional materials deposition process, cost‐efficient and high‐performance resistive switching devices were fabricated for next‐generation computation and communication.
SN - 2199-160X
SN - 2199-160X
ER -