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Peer-reviewedCC BYJournal of Advanced Ceramics

Dual rare-earth modification and interface engineering in SiC-based heterostructures for multi-frequency electromagnetic wave absorption

  1. 1Jiangxi Key Laboratory of Advanced Ceramic Materials , School of Materials Science and Engineering , Jingdezhen Ceramic University , Jingdezhen 333403 , China

Abstract

The escalating complexity of the electromagnetic environment calls for advanced electromagnetic wave (EMW) absorption materials capable of efficient multi-frequency attenuation. Silicon carbide (SiC) is a promising dielectric candidate but is hindered by intrinsic impedance mismatch and limited polarization loss. Herein, we report a novel ternary heterostructure absorber consisting of SiC nanowires synergistically coupled with dual rare-earth silicides (Ce5Si4 and Pr5Si4) fabricated via a combined magnesiothermic and carbothermal reduction process using an MFI-type zeolite precursor. This unique architecture creates an intricate porous network featuring abundant multiple heterogeneous interfaces (SiC/Ce5Si4, SiC/Pr5Si4, and Ce5Si4/Pr5Si4). The simultaneous incorporation of Ce and Pr optimizes the complex permittivity for impedance matching and induces intense multi-interfacial polarization relaxation. Consequently, the designed composite achieves efficient and strong EMW absorption performance in the C-band (4.30 GHz), X-band (8.24 GHz), and Ku-band (16.51 GHz), demonstrating remarkable multi-frequency point absorption performance. Radar cross-section (RCS) simulations further demonstrate its significant stealth capability, highlighting the potential of dual rare-earth synergistic engineering. This work provides a pioneering strategy for designing high-performance, multi-frequency SiC-based absorbers through the construction of ternary rare-earth silicide heterostructures.

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BibTeX
@article{xu2026dual,
  title = {{Dual rare-earth modification and interface engineering in SiC-based heterostructures for multi-frequency electromagnetic wave absorption}},
  author = {Jingyi Xu and Zhanming Wu and Yunan Tan and Xiaojun Zeng},
  journal = {Journal of Advanced Ceramics},
  year = {2026},
  month = may,
  doi = {10.26599/jac.2026.9221325},
  url = {https://doi.org/10.26599/jac.2026.9221325},
  note = {CC BY},
}
RIS
TY  - JOUR
TI  - Dual rare-earth modification and interface engineering in SiC-based heterostructures for multi-frequency electromagnetic wave absorption
AU  - Jingyi Xu
AU  - Zhanming Wu
AU  - Yunan Tan
AU  - Xiaojun Zeng
PY  - 2026
DA  - 2026/05/20
JO  - Journal of Advanced Ceramics
DO  - 10.26599/jac.2026.9221325
UR  - https://doi.org/10.26599/jac.2026.9221325
AB  - The escalating complexity of the electromagnetic environment calls for advanced electromagnetic wave (EMW) absorption materials capable of efficient multi-frequency attenuation. Silicon carbide (SiC) is a promising dielectric candidate but is hindered by intrinsic impedance mismatch and limited polarization loss. Herein, we report a novel ternary heterostructure absorber consisting of SiC nanowires synergistically coupled with dual rare-earth silicides (Ce5Si4 and Pr5Si4) fabricated via a combined magnesiothermic and carbothermal reduction process using an MFI-type zeolite precursor. This unique architecture creates an intricate porous network featuring abundant multiple heterogeneous interfaces (SiC/Ce5Si4, SiC/Pr5Si4, and Ce5Si4/Pr5Si4). The simultaneous incorporation of Ce and Pr optimizes the complex permittivity for impedance matching and induces intense multi-interfacial polarization relaxation. Consequently, the designed composite achieves efficient and strong EMW absorption performance in the C-band (4.30 GHz), X-band (8.24 GHz), and Ku-band (16.51 GHz), demonstrating remarkable multi-frequency point absorption performance. Radar cross-section (RCS) simulations further demonstrate its significant stealth capability, highlighting the potential of dual rare-earth synergistic engineering. This work provides a pioneering strategy for designing high-performance, multi-frequency SiC-based absorbers through the construction of ternary rare-earth silicide heterostructures.
SN  - 2226-4108
SN  - 2227-8508
ER  -