Peer-reviewedLicence not statedAdvanced Materials
High‐Yield Engineering and Identification of Oxygen‐Related Modified Divacancies in 4H‐SiC
7 affiliations
- 1Anhui Province Key Laboratory of Quantum Network University of Science and Technology of China Hefei Anhui China
- 2CAS Center For Excellence in Quantum Information and Quantum Physics University of Science and Technology of China Hefei Anhui China
- 3Hefei National Laboratory University of Science and Technology of China Hefei Anhui China
- 4Laboratory of Quantum Information University of Science and Technology of China Hefei Anhui China
- 5HUN‐REN Wigner Research Centre for Physics Institute for Solid State Physics and Optics Budapest Hungary
- 6Department of Atomic Physics, Institute of Physics Budapest University of Technology and Economics Budapest Hungary
- 7MTA‐WFK ”Lendület” Momentum Semiconductor Nanostructures Research Group Budapest Hungary
Related
- Site-preference engineering of cobalt active-site ensembles in spinel oxides for oxygen evolution
- Overlooked Roles of Oxygen in PFAS Degradation by UV/Sulfite: Mechanistic Insights and Engineering Implications
- Metal–oxygen covalency engineering activates stable lattice oxygen in NiCo2O4 spinel for efficient oxygen evolution
- Surface Phosphorus-Modified Mo2C MXene Toward Boosted Oxygen Reduction Reaction for Mg–Air Battery
- A unified lattice–surface engineering strategy stabilizing oxygen redox in Li-rich cathodes for all-solid-state batteries
BibTeX
@article{hu2026highyield,
title = {{High‐Yield Engineering and Identification of Oxygen‐Related Modified Divacancies in 4H‐SiC}},
author = {Qi Hu and Ji-Yang Zhou and Shuo Ren and Zhen-Xuan He and Zhi-He Hao and Rui‐Jian Liang and Wu-Xi Lin and Xiangru Han and Ádám Gali and Jin‐Shi Xu and Chuan‐Feng Li and Guang‐Can Guo},
journal = {Advanced Materials},
year = {2026},
month = may,
doi = {10.1002/adma.73419},
url = {https://arxiv.org/abs/2511.22608},
}
RIS
TY - JOUR
TI - High‐Yield Engineering and Identification of Oxygen‐Related Modified Divacancies in 4H‐SiC
AU - Qi Hu
AU - Ji-Yang Zhou
AU - Shuo Ren
AU - Zhen-Xuan He
AU - Zhi-He Hao
AU - Rui‐Jian Liang
AU - Wu-Xi Lin
AU - Xiangru Han
AU - Ádám Gali
AU - Jin‐Shi Xu
AU - Chuan‐Feng Li
AU - Guang‐Can Guo
PY - 2026
DA - 2026/05/16
JO - Advanced Materials
DO - 10.1002/adma.73419
UR - https://arxiv.org/abs/2511.22608
SN - 0935-9648
SN - 1521-4095
ER -