Low Temperature Halide Assisted HVPE Growth of Single Crystal AlN Films
Abstract
Low defect, single polarity aluminum nitride layers grown by halide vapor phase epitaxy (HVPE) methods have classically needed growth temperatures well exceeding 1100°C with many of the best results being grown in the range of 1400°C. These high temperatures have typically been required to obtain Al-polar AlN films with smooth morphologies and high crystalline quality. However, these elevated temperatures make the use of quartz reactor chambers difficult, as quartz begins to soften at 1200°C, and requires specially designed reactors. This study examines the use of anhydrous hydrogen chloride (HCl) gas, injected directly to the growth surface, to suppress inverted polarity grains that form at low growth temperatures. This method allows for high quality, single crystal AlN layers with a growth temperature of just 1000°C in a quartz reactor chamber. With this method, AlN layers of 5 um thickness were grown on c-plane (0 0 0 1) sapphire, with a growth rate of 20 um/hour, and a resulting full-width at half-maximum (FWHM) of symmetric (0 0 0 2) rocking curve reflection under 400 arcsec and asymmetric (1 0 -1 2) reflection under 1000 arcsec. Electron backscatter diffraction measurements showed the suppression of inversion domains with increasing free HCl, resulting in smoother and higher quality films.
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BibTeX
@misc{udwary2026temperature,
title = {{Low Temperature Halide Assisted HVPE Growth of Single Crystal AlN Films}},
author = {K. Udwary and M. Smeaton and J. S. Mangum and R. Gannon and G. Dodson and B. Tellekamp and K. L. Schulte and J. H. Leach and J. Simon},
howpublished = {arXiv},
year = {2026},
month = sep,
doi = {10.48550/arxiv.2609.18647},
eprint = {2609.18647},
archivePrefix = {arXiv},
url = {https://arxiv.org/abs/2609.18647},
}
RIS
TY - UNPB
TI - Low Temperature Halide Assisted HVPE Growth of Single Crystal AlN Films
AU - K. Udwary
AU - M. Smeaton
AU - J. S. Mangum
AU - R. Gannon
AU - G. Dodson
AU - B. Tellekamp
AU - K. L. Schulte
AU - J. H. Leach
AU - J. Simon
PY - 2026
DA - 2026/09/16
PB - arXiv
DO - 10.48550/arxiv.2609.18647
UR - https://arxiv.org/abs/2609.18647
AB - Low defect, single polarity aluminum nitride layers grown by halide vapor phase epitaxy (HVPE) methods have classically needed growth temperatures well exceeding 1100°C with many of the best results being grown in the range of 1400°C. These high temperatures have typically been required to obtain Al-polar AlN films with smooth morphologies and high crystalline quality. However, these elevated temperatures make the use of quartz reactor chambers difficult, as quartz begins to soften at 1200°C, and requires specially designed reactors. This study examines the use of anhydrous hydrogen chloride (HCl) gas, injected directly to the growth surface, to suppress inverted polarity grains that form at low growth temperatures. This method allows for high quality, single crystal AlN layers with a growth temperature of just 1000°C in a quartz reactor chamber. With this method, AlN layers of 5 um thickness were grown on c-plane (0 0 0 1) sapphire, with a growth rate of 20 um/hour, and a resulting full-width at half-maximum (FWHM) of symmetric (0 0 0 2) rocking curve reflection under 400 arcsec and asymmetric (1 0 -1 2) reflection under 1000 arcsec. Electron backscatter diffraction measurements showed the suppression of inversion domains with increasing free HCl, resulting in smoother and higher quality films.
ER -