Facile hBN-hBN Interfacial Overlap Engineering for Enhanced Quantum Emitter Formation
Abstract
Quantum emitters in two-dimensional materials, particularly hBN, are promising platforms for quantum technologies. However, achieving high-density emitters at predetermined locations while preserving optical quality remains challenging. Here, we introduce a facile, cost-effective double-layer all-dry transfer approach to deterministically create overlap regions between hBN flakes. These pre-defined capped regions exhibit a significantly enhanced emitter density, with up to a 15-fold increase compared to uncapped areas. Importantly, this method does not compromise emitter quality: emitters within overlap regions demonstrate excellent optical performance, including high signal-to-background and signal-to-noise ratios, large Debye-Waller factors, high brightness, and strong spectral stability. Possible defect configurations are also discussed to contextualize the observed emission characteristics. This scalable strategy enables preferential formation of quantum emitters in targeted regions, achieving higher densities than simple treatments such as plasma irradiation while avoiding the complexity of advanced fabrication techniques. The approach provides a practical pathway for integrating high-quality quantum emitters into scalable quantum photonic platforms.
Related
- Interfacial Polarization and Charge Transfer in Al13 Superatom–Organic Interfaces: Role of Frontier Orbital Overlap
- Strain-overlap and surface-confinement engineering in AlScN/YIG magnetoacoustic devices
- The role of root allometry and root overlap in vegetation pattern formation
- Interfacial Engineering Enabled High-Resolution Stretchable Metal-Level Conductive Lines and Transparent Conductor
- Interfacial Hole Accumulation Enables Selective Free-Surface Formation in Ge-on-Si
BibTeX
@misc{nguyen2026facile,
title = {{Facile hBN-hBN Interfacial Overlap Engineering for Enhanced Quantum Emitter Formation}},
author = {Nhat Minh Nguyen and Trung Vuong Doan and Md Shakhawath Hossain and Akila Elangasinghe and Duc Anh Ngo and Ha Ngoc Duy Huynh and Thi Ngoc Anh Mai and Yongliang Chen and Kenji Watanabe and Takashi Taniguchi and Michael G. Ruppert and Chaohao Chen and Xiaoxue Xu and Toan Dinh and Toan Trong Tran},
howpublished = {arXiv},
year = {2026},
month = sep,
doi = {10.48550/arxiv.2609.09771},
eprint = {2609.09771},
archivePrefix = {arXiv},
url = {https://arxiv.org/abs/2609.09771},
}
RIS
TY - UNPB
TI - Facile hBN-hBN Interfacial Overlap Engineering for Enhanced Quantum Emitter Formation
AU - Nhat Minh Nguyen
AU - Trung Vuong Doan
AU - Md Shakhawath Hossain
AU - Akila Elangasinghe
AU - Duc Anh Ngo
AU - Ha Ngoc Duy Huynh
AU - Thi Ngoc Anh Mai
AU - Yongliang Chen
AU - Kenji Watanabe
AU - Takashi Taniguchi
AU - Michael G. Ruppert
AU - Chaohao Chen
AU - Xiaoxue Xu
AU - Toan Dinh
AU - Toan Trong Tran
PY - 2026
DA - 2026/09/09
PB - arXiv
DO - 10.48550/arxiv.2609.09771
UR - https://arxiv.org/abs/2609.09771
AB - Quantum emitters in two-dimensional materials, particularly hBN, are promising platforms for quantum technologies. However, achieving high-density emitters at predetermined locations while preserving optical quality remains challenging. Here, we introduce a facile, cost-effective double-layer all-dry transfer approach to deterministically create overlap regions between hBN flakes. These pre-defined capped regions exhibit a significantly enhanced emitter density, with up to a 15-fold increase compared to uncapped areas. Importantly, this method does not compromise emitter quality: emitters within overlap regions demonstrate excellent optical performance, including high signal-to-background and signal-to-noise ratios, large Debye-Waller factors, high brightness, and strong spectral stability. Possible defect configurations are also discussed to contextualize the observed emission characteristics. This scalable strategy enables preferential formation of quantum emitters in targeted regions, achieving higher densities than simple treatments such as plasma irradiation while avoiding the complexity of advanced fabrication techniques. The approach provides a practical pathway for integrating high-quality quantum emitters into scalable quantum photonic platforms.
ER -