Interfacial Hole Accumulation Enables Selective Free-Surface Formation in Ge-on-Si

Abstract

Electrochemically formed two-dimensional free surfaces (2DFS) decouple Ge epilayers from the misfit-dislocation network at the Ge/Si interface, but the origin of their selectivity has remained unclear. We combine finite-volume current-distribution modelling, including charge-transfer kinetics, with a one-dimensional Poisson analysis of the p-Ge/p+-Si heterojunction. With realistic conductivities, an ohmic description would drive 77% of the anodic current through Ge, whereas hole-limited charge transfer reduces this fraction to 0.07%, independently of the electrolyte conductivity. The valence-band offset accumulates holes on the Ge side up to ~1019 cm--3 within a self-limited nanometric layer, which localizes dissolution at the interface. The model yields design rules for the doping contrast (NSi/NGe ___ 60) and the mesa width (___ 3.6λ, with λ ≈ 1.7 μm).

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BibTeX RIS

BibTeX

@misc{bioud2026interfacial,
  title = {{Interfacial Hole Accumulation Enables Selective Free-Surface Formation in Ge-on-Si}},
  author = {Youcef A Bioud and Meriem Bouchilaoun and Waldemar Schreiber and Redouane Amrar and Gilles Patriarche and Ali Soltani and Stefan Janz},
  howpublished = {arXiv},
  year = {2026},
  month = nov,
  doi = {10.48550/arxiv.2611.04589},
  eprint = {2611.04589},
  archivePrefix = {arXiv},
  url = {https://arxiv.org/abs/2611.04589},
}

RIS

TY  - UNPB
TI  - Interfacial Hole Accumulation Enables Selective Free-Surface Formation in Ge-on-Si
AU  - Youcef A Bioud
AU  - Meriem Bouchilaoun
AU  - Waldemar Schreiber
AU  - Redouane Amrar
AU  - Gilles Patriarche
AU  - Ali Soltani
AU  - Stefan Janz
PY  - 2026
DA  - 2026/11/03
PB  - arXiv
DO  - 10.48550/arxiv.2611.04589
UR  - https://arxiv.org/abs/2611.04589
AB  - Electrochemically formed two-dimensional free surfaces (2DFS) decouple Ge epilayers from the misfit-dislocation network at the Ge/Si interface, but the origin of their selectivity has remained unclear. We combine finite-volume current-distribution modelling, including charge-transfer kinetics, with a one-dimensional Poisson analysis of the p-Ge/p+-Si heterojunction. With realistic conductivities, an ohmic description would drive 77% of the anodic current through Ge, whereas hole-limited charge transfer reduces this fraction to 0.07%, independently of the electrolyte conductivity. The valence-band offset accumulates holes on the Ge side up to ~1019 cm--3 within a self-limited nanometric layer, which localizes dissolution at the interface. The model yields design rules for the doping contrast (NSi/NGe ___ 60) and the mesa width (___ 3.6λ, with λ ≈ 1.7 μm).
ER  -

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