Influence of Electrostatic Environment on the Proximity Spin-Orbit Coupling in Graphene on Transition-Metal Dichalcogenides
Abstract
We investigate the proximity-induced spin-orbit coupling (SOC) in graphene on transition-metal dichalcogenide (TMD) heterostructures using a tight-binding approach. The tight-binding parameters of an effective 4-band model describing the low-energy physics of the graphene layer are extracted as a function of twist angle, material composition (MoS2, MoSe2, WS2, WSe2), band alignment, and charge-transfer dipole. We investigate the effect of a charge-transfer dipole induced on the chalcogen layer closest to graphene, which is typically neglected in tight-binding models but included in ab initio calculations through charge redistribution. In addition, we explore the influence of variations in the band alignment. We find that the spin-valley and Rashba spin-orbit coupling energies as well as the so-called Rashba phase, governing the orientation of momentum-space spin textures, show a strong dependence on the twist angle and electrostatic tuning. Our results suggest that variations in band alignment and charge redistribution contribute to the spread of spin-orbit parameters reported in the literature.
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BibTeX
@misc{jorissen2026influence,
title = {{Influence of Electrostatic Environment on the Proximity Spin-Orbit Coupling in Graphene on Transition-Metal Dichalcogenides}},
author = {Bert Jorissen and Bart Partoens and Aires Ferreira and Lucian Covaci},
howpublished = {arXiv},
year = {2026},
month = sep,
doi = {10.48550/arxiv.2609.25305},
eprint = {2609.25305},
archivePrefix = {arXiv},
url = {https://arxiv.org/abs/2609.25305},
}
RIS
TY - UNPB
TI - Influence of Electrostatic Environment on the Proximity Spin-Orbit Coupling in Graphene on Transition-Metal Dichalcogenides
AU - Bert Jorissen
AU - Bart Partoens
AU - Aires Ferreira
AU - Lucian Covaci
PY - 2026
DA - 2026/09/21
PB - arXiv
DO - 10.48550/arxiv.2609.25305
UR - https://arxiv.org/abs/2609.25305
AB - We investigate the proximity-induced spin-orbit coupling (SOC) in graphene on transition-metal dichalcogenide (TMD) heterostructures using a tight-binding approach. The tight-binding parameters of an effective 4-band model describing the low-energy physics of the graphene layer are extracted as a function of twist angle, material composition (MoS_2, MoSe_2, WS_2, WSe_2), band alignment, and charge-transfer dipole. We investigate the effect of a charge-transfer dipole induced on the chalcogen layer closest to graphene, which is typically neglected in tight-binding models but included in ab initio calculations through charge redistribution. In addition, we explore the influence of variations in the band alignment. We find that the spin-valley and Rashba spin-orbit coupling energies as well as the so-called Rashba phase, governing the orientation of momentum-space spin textures, show a strong dependence on the twist angle and electrostatic tuning. Our results suggest that variations in band alignment and charge redistribution contribute to the spread of spin-orbit parameters reported in the literature.
ER -