Demonstration of room-temperature, magnetic-field-free, and ultralow-power spin-orbit torque logic device based on composition-uniform van der Waals magnet Fe3GaTe2
Abstract
Van der Waals magnets have received blooming interest in material science and spintronics for the advantages of low magnetization, flexible stacking, strong tunability, and dangling-bond-free interfaces. However, there has been no report of room-temperature magnetic-field-free spin logic device based on a van der Waals magnet. Here, we demonstrate a room-temperature, field-free, low-power, scalable spin-orbit torque in-memory computing logic device utilizing a van der Waals magnet Fe3GaTe2 bit with strong perpendicular magnetic anisotropy and a Pt channel with strong spin Hall effect, high electrical conductivity, and electric asymmetries. Current pulse width-dependent switching measurement reveals a low intrinsic critical magnetic-field-free switching current of 1.8e7 A cm-2, a high thermal stability factor of 50, and the potential of an ultralow write power of 1.5 fJ per bit at 1 ns pulse width for a typical industrial-level device dimensions (40 times lower than the industrially optimized W/FeCoB device). These results suggest a great potential of van der Waals magnets in dense, ultralow-power, scalable in-memory computing technologies.
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BibTeX
@misc{li2026demonstration,
title = {{Demonstration of room-temperature, magnetic-field-free, and ultralow-power spin-orbit torque logic device based on composition-uniform van der Waals magnet Fe3GaTe2}},
author = {Zhengxiao Li and Qianbiao Liu and Wenliang Zhu and Lijun Zhu},
howpublished = {arXiv},
year = {2026},
month = sep,
doi = {10.48550/arxiv.2609.04600},
eprint = {2609.04600},
archivePrefix = {arXiv},
url = {https://arxiv.org/abs/2609.04600},
}
RIS
TY - UNPB
TI - Demonstration of room-temperature, magnetic-field-free, and ultralow-power spin-orbit torque logic device based on composition-uniform van der Waals magnet Fe3GaTe2
AU - Zhengxiao Li
AU - Qianbiao Liu
AU - Wenliang Zhu
AU - Lijun Zhu
PY - 2026
DA - 2026/09/04
PB - arXiv
DO - 10.48550/arxiv.2609.04600
UR - https://arxiv.org/abs/2609.04600
AB - Van der Waals magnets have received blooming interest in material science and spintronics for the advantages of low magnetization, flexible stacking, strong tunability, and dangling-bond-free interfaces. However, there has been no report of room-temperature magnetic-field-free spin logic device based on a van der Waals magnet. Here, we demonstrate a room-temperature, field-free, low-power, scalable spin-orbit torque in-memory computing logic device utilizing a van der Waals magnet Fe3GaTe2 bit with strong perpendicular magnetic anisotropy and a Pt channel with strong spin Hall effect, high electrical conductivity, and electric asymmetries. Current pulse width-dependent switching measurement reveals a low intrinsic critical magnetic-field-free switching current of 1.8e7 A cm-2, a high thermal stability factor of 50, and the potential of an ultralow write power of 1.5 fJ per bit at 1 ns pulse width for a typical industrial-level device dimensions (40 times lower than the industrially optimized W/FeCoB device). These results suggest a great potential of van der Waals magnets in dense, ultralow-power, scalable in-memory computing technologies.
ER -