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PreprintCC BY 4.0arXiv

Effect of Source-to-Substrate Distance on the Optical and Electrical Properties of Thermally Deposited CdTe, CdSe and Sb2S3 Thin Films

Abstract

In this work, cadmium telluride (CdTe), cadmium selenide (CdSe), and antimony sulfide (Sb2S3) thin films were deposited using the thermal evaporation technique by varying the source-to-substrate distance (SSD) from 15 to 24 cm (15, 18, 21, and 24 cm). The influence of the SSD on the structural, compositional, optical and electrical properties of the deposited films was systematically investigated. XRD analysis revealed the polycrystalline nature of the CdTe and CdSe thin films, whereas the Sb2S3 thin films exhibited an amorphous nature. EDX spectroscopy confirmed the presence of the constituent elements in the deposited films. Optical analysis revealed a marginal variation in the optical band gap with increasing SSD, while the film thickness, determined using the envelope method, decreased with increasing SSD. The optical band gap energies of CdTe and CdSe were found to be below 2 eV, whereas Sb2S3 exhibited a relatively higher band gap. The relatively low band gap energies and high absorption coefficients of the CdTe and CdSe films make them promising candidates for absorber layer applications in thin film solar cells (TFSCs). The films exhibited relatively low optical transmittance, which is desirable for efficient light absorption in absorber layers. Electrical characterization confirmed the semiconducting nature of all the deposited thin films. Overall, the results demonstrate that the optical and electrical properties of CdTe, CdSe and Sb2S3 thin films can be effectively modified by varying the SSD. The findings indicate that, in addition to the well established CdTe absorber, CdSe thin films show potential for application as absorber materials in TFSCs.

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BibTeX
@misc{pathok2026effect,
  title = {{Effect of Source-to-Substrate Distance on the Optical and Electrical Properties of Thermally Deposited CdTe, CdSe and Sb$_2$S$_3$ Thin Films}},
  author = {Himanshu Sharma Pathok and Prasanta Kumar Saikia},
  howpublished = {arXiv},
  year = {2026},
  month = oct,
  doi = {10.48550/arxiv.2610.07222},
  eprint = {2610.07222},
  archivePrefix = {arXiv},
  url = {https://arxiv.org/abs/2610.07222},
  note = {CC BY 4.0},
}
RIS
TY  - UNPB
TI  - Effect of Source-to-Substrate Distance on the Optical and Electrical Properties of Thermally Deposited CdTe, CdSe and Sb_2S_3 Thin Films
AU  - Himanshu Sharma Pathok
AU  - Prasanta Kumar Saikia
PY  - 2026
DA  - 2026/10/05
PB  - arXiv
DO  - 10.48550/arxiv.2610.07222
UR  - https://arxiv.org/abs/2610.07222
AB  - In this work, cadmium telluride (CdTe), cadmium selenide (CdSe), and antimony sulfide (Sb_2S_3) thin films were deposited using the thermal evaporation technique by varying the source-to-substrate distance (SSD) from 15 to 24 cm (15, 18, 21, and 24 cm). The influence of the SSD on the structural, compositional, optical and electrical properties of the deposited films was systematically investigated. XRD analysis revealed the polycrystalline nature of the CdTe and CdSe thin films, whereas the Sb_2S_3 thin films exhibited an amorphous nature. EDX spectroscopy confirmed the presence of the constituent elements in the deposited films. Optical analysis revealed a marginal variation in the optical band gap with increasing SSD, while the film thickness, determined using the envelope method, decreased with increasing SSD. The optical band gap energies of CdTe and CdSe were found to be below 2 eV, whereas Sb_2S_3 exhibited a relatively higher band gap. The relatively low band gap energies and high absorption coefficients of the CdTe and CdSe films make them promising candidates for absorber layer applications in thin film solar cells (TFSCs). The films exhibited relatively low optical transmittance, which is desirable for efficient light absorption in absorber layers. Electrical characterization confirmed the semiconducting nature of all the deposited thin films. Overall, the results demonstrate that the optical and electrical properties of CdTe, CdSe and Sb_2S_3 thin films can be effectively modified by varying the SSD. The findings indicate that, in addition to the well established CdTe absorber, CdSe thin films show potential for application as absorber materials in TFSCs.
ER  -