Opto-Electrical Detection of Donor Bound Excitons in Silicon-on-Insulator Substrate
Abstract
Spin of a donor bound electron in silicon has been shown to be a very coherent qubit system but lacks a coherent optical interface. There does, however, exist a donor bound exciton transition that can be excited optically but decays dominantly via an Auger recombination producing an electrical signal. This provides an opto-electrical pathway for spin readout. Scaling this readout to single-spin level will require interfacing the spins with silicon photonics for efficient guiding of photons, which in turn will require moving to silicon-on-insulator (SOI) substrates. Here we demonstrate first ensemble opto-electronic measurements of donor bound excitons in SOI material, including isotopically purified 28-Si device layers. The experiments show pronounced shifts in the resonance wavelengths and broadenings of the transition linewidths compared to the bulk experiments.
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BibTeX
@misc{kanniainen2026optoelectrical,
title = {{Opto-Electrical Detection of Donor Bound Excitons in Silicon-on-Insulator Substrate}},
author = {A. Kanniainen and A. S. Kumar and A. Sammak and G. Scappucci and J. T. Muhonen},
howpublished = {arXiv},
year = {2026},
month = sep,
doi = {10.48550/arxiv.2609.15674},
eprint = {2609.15674},
archivePrefix = {arXiv},
url = {https://arxiv.org/abs/2609.15674},
}
RIS
TY - UNPB
TI - Opto-Electrical Detection of Donor Bound Excitons in Silicon-on-Insulator Substrate
AU - A. Kanniainen
AU - A. S. Kumar
AU - A. Sammak
AU - G. Scappucci
AU - J. T. Muhonen
PY - 2026
DA - 2026/09/14
PB - arXiv
DO - 10.48550/arxiv.2609.15674
UR - https://arxiv.org/abs/2609.15674
AB - Spin of a donor bound electron in silicon has been shown to be a very coherent qubit system but lacks a coherent optical interface. There does, however, exist a donor bound exciton transition that can be excited optically but decays dominantly via an Auger recombination producing an electrical signal. This provides an opto-electrical pathway for spin readout. Scaling this readout to single-spin level will require interfacing the spins with silicon photonics for efficient guiding of photons, which in turn will require moving to silicon-on-insulator (SOI) substrates. Here we demonstrate first ensemble opto-electronic measurements of donor bound excitons in SOI material, including isotopically purified 28-Si device layers. The experiments show pronounced shifts in the resonance wavelengths and broadenings of the transition linewidths compared to the bulk experiments.
ER -