Hybrid integration of a SESAM with a silicon nitride photonic integrated circuit
Abstract
The realization of high-performance femtosecond lasers on photonic integrated circuits (PICs) requires robust, low-loss coupling between a saturable absorber and a photonic waveguide. In this work, we demonstrate the hybrid integration of a semiconductor saturable absorber mirror (SESAM) with a silicon nitride (SiN) PIC by micro-assembly. This micro-assembly strategy transfers the non-linear functionality of the absorber onto the PIC. We characterize the linear and non-linear performance of an unbonded SESAM and of a SESAM bonded to inverse-tapered SiN waveguides. At 1560~nm, the bonded device shows a waveguide-coupled modulation depth of 5.2\%, a maximum reflectivity of 37.2\%, and a saturation fluence of 47~\textmu J/cm2. This work demonstrates that SESAMs can be integrated directly onto silicon nitride-based PIC platforms and provides a pathway towards fully integrated, self-starting, chip-scale ultrafast lasers.
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BibTeX
@misc{verstraete2026hybrid,
title = {{Hybrid integration of a SESAM with a silicon nitride photonic integrated circuit}},
author = {Amaryllis Verstraete and Tom Reep and Jan de Haan and Eero Koivusalo and Riku Isoaho and Thi Ngoc Lam Tran and Bart Kuyken and Kasper Van Gasse},
howpublished = {arXiv},
year = {2026},
month = nov,
doi = {10.48550/arxiv.2611.08057},
eprint = {2611.08057},
archivePrefix = {arXiv},
url = {https://arxiv.org/abs/2611.08057},
}
RIS
TY - UNPB
TI - Hybrid integration of a SESAM with a silicon nitride photonic integrated circuit
AU - Amaryllis Verstraete
AU - Tom Reep
AU - Jan de Haan
AU - Eero Koivusalo
AU - Riku Isoaho
AU - Thi Ngoc Lam Tran
AU - Bart Kuyken
AU - Kasper Van Gasse
PY - 2026
DA - 2026/11/05
PB - arXiv
DO - 10.48550/arxiv.2611.08057
UR - https://arxiv.org/abs/2611.08057
AB - The realization of high-performance femtosecond lasers on photonic integrated circuits (PICs) requires robust, low-loss coupling between a saturable absorber and a photonic waveguide. In this work, we demonstrate the hybrid integration of a semiconductor saturable absorber mirror (SESAM) with a silicon nitride (SiN) PIC by micro-assembly. This micro-assembly strategy transfers the non-linear functionality of the absorber onto the PIC. We characterize the linear and non-linear performance of an unbonded SESAM and of a SESAM bonded to inverse-tapered SiN waveguides. At 1560~nm, the bonded device shows a waveguide-coupled modulation depth of 5.2\%, a maximum reflectivity of 37.2\%, and a saturation fluence of 47~\textmu J/cm^2. This work demonstrates that SESAMs can be integrated directly onto silicon nitride-based PIC platforms and provides a pathway towards fully integrated, self-starting, chip-scale ultrafast lasers.
ER -