Pulse Laser Deposited GaFeO3 Thin Film Grown on FTO: Correlated Ferroic Orders and Strong Magnetodielectric Coupling at Room Temperature
Abstract
Room-temperature single-phase multiferroics exhibiting coupled ferroelectric and magnetic order are promising candidates for next-generation magnetoelectric memory and spintronic technologies. Here, we report the growth of approximately 100.6 nm thick polycrystalline orthorhombic GaFeO3 thin films on fluorine-doped tin oxide-coated glass (FTO) substrates by pulsed laser deposition. Core-level X-ray photoelectron spectroscopy reveals a reduced Fe2+ concentration and suppressed oxygen-vacancy formation, contributing to reduced leakage current and improved ferroelectric characteristics. The films exhibit robust ferrimagnetism and ferroelectricity at room temperature, confirming the coexistence of ferroic orders within a single phase. Piezoresponse Force Microscopy further demonstrates reversible local polarization switching, accompanied by an asymmetric butterfly loop with coercive voltages of -0.31 V and +1.07 V. The films also exhibit a high relative dielectric constant of approximately 1700 with a relatively low dielectric loss tangent of approximately 2.83 at 1 MHz. Moreover, a significant magnetodielectric coefficient of approximately 2.3% is observed under a relatively small magnetic field of only 0.1 kOe, highlighting strong magnetoelectric coupling. These results establish GaFeO3 thin films as a promising platform for room-temperature multifunctional devices, mainly low-field magnetoelectric memory and spintronic architectures.
Related
- Multi-techniques characterisation of anti-reflective Ta2O5 and TaOxNy thin films deposited by reactive sputtering: coupling X-ray photoelectron spectroscopy, scanning/transmission electron microscopy and ion beam analysis
- OpenFerro: a unified framework for mesoscale ferroic dynamics and enhanced sampling
- Real-space manifestation of ferroic multipoles in altermagnetic MnF2
- Room-temperature Magnetoelastic Coupling in UIr4Al15
- Temperature--Hamiltonian Ambiguity in Strong-Coupling Quantum Equilibrium
BibTeX
@misc{jana2026pulse,
title = {{Pulse Laser Deposited GaFeO3 Thin Film Grown on FTO: Correlated Ferroic Orders and Strong Magnetodielectric Coupling at Room Temperature}},
author = {Ishita Jana and Sourav Sarkar and Soham Saha and Kalyan Mandal},
howpublished = {arXiv},
year = {2026},
month = oct,
doi = {10.48550/arxiv.2610.39696},
eprint = {2610.39696},
archivePrefix = {arXiv},
url = {https://arxiv.org/abs/2610.39696},
}
RIS
TY - UNPB
TI - Pulse Laser Deposited GaFeO3 Thin Film Grown on FTO: Correlated Ferroic Orders and Strong Magnetodielectric Coupling at Room Temperature
AU - Ishita Jana
AU - Sourav Sarkar
AU - Soham Saha
AU - Kalyan Mandal
PY - 2026
DA - 2026/10/29
PB - arXiv
DO - 10.48550/arxiv.2610.39696
UR - https://arxiv.org/abs/2610.39696
AB - Room-temperature single-phase multiferroics exhibiting coupled ferroelectric and magnetic order are promising candidates for next-generation magnetoelectric memory and spintronic technologies. Here, we report the growth of approximately 100.6 nm thick polycrystalline orthorhombic GaFeO3 thin films on fluorine-doped tin oxide-coated glass (FTO) substrates by pulsed laser deposition. Core-level X-ray photoelectron spectroscopy reveals a reduced Fe2+ concentration and suppressed oxygen-vacancy formation, contributing to reduced leakage current and improved ferroelectric characteristics. The films exhibit robust ferrimagnetism and ferroelectricity at room temperature, confirming the coexistence of ferroic orders within a single phase. Piezoresponse Force Microscopy further demonstrates reversible local polarization switching, accompanied by an asymmetric butterfly loop with coercive voltages of -0.31 V and +1.07 V. The films also exhibit a high relative dielectric constant of approximately 1700 with a relatively low dielectric loss tangent of approximately 2.83 at 1 MHz. Moreover, a significant magnetodielectric coefficient of approximately 2.3% is observed under a relatively small magnetic field of only 0.1 kOe, highlighting strong magnetoelectric coupling. These results establish GaFeO3 thin films as a promising platform for room-temperature multifunctional devices, mainly low-field magnetoelectric memory and spintronic architectures.
ER -