Transverse-Anderson localization of light in disordered silicon pores
Abstract
Transverse light localization of Anderson type through disorders has made intriguing fundamental topics. Toward this, we found that in the disordered porous Si (PSi) a nearly "zero reflection" (from 450 to 900 nm) can be observed. The localization length versus disorder parameter is experimentally visualized and calculated based on a self consistent theory and solution of stochastic Helmholtz equation for electric fields traveling in a transverse disordered media with the results determined to be in a reasonable agreement with experiments. Based on these calculations for different pore diameters in a constant order parameter, diffusion length can vary from 260 nm to 2.4μm, accounting as controllability of such structure for further applications in photonic devices. Reflection from ordered PSi structure are evaluated that shows no similar responses to those seen in disordered PSi.
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BibTeX
@misc{erfanifam2026transverseanderson,
title = {{Transverse-Anderson localization of light in disordered silicon pores}},
author = {S. Erfanifam and C. Yanik and M. Erfanifam},
howpublished = {arXiv},
year = {2026},
month = sep,
doi = {10.48550/arxiv.2609.13484},
eprint = {2609.13484},
archivePrefix = {arXiv},
url = {https://arxiv.org/abs/2609.13484},
note = {CC BY-NC-ND 4.0},
}
RIS
TY - UNPB
TI - Transverse-Anderson localization of light in disordered silicon pores
AU - S. Erfanifam
AU - C. Yanik
AU - M. Erfanifam
PY - 2026
DA - 2026/09/11
PB - arXiv
DO - 10.48550/arxiv.2609.13484
UR - https://arxiv.org/abs/2609.13484
AB - Transverse light localization of Anderson type through disorders has made intriguing fundamental topics. Toward this, we found that in the disordered porous Si (PSi) a nearly "zero reflection" (from 450 to 900 nm) can be observed. The localization length versus disorder parameter is experimentally visualized and calculated based on a self consistent theory and solution of stochastic Helmholtz equation for electric fields traveling in a transverse disordered media with the results determined to be in a reasonable agreement with experiments. Based on these calculations for different pore diameters in a constant order parameter, diffusion length can vary from 260 nm to 2.4μm, accounting as controllability of such structure for further applications in photonic devices. Reflection from ordered PSi structure are evaluated that shows no similar responses to those seen in disordered PSi.
ER -