PreprintarXiv licencearXiv
Understanding Ideality Factor in Wide-Band Gap Semiconductor Devices with Strong Recombination Planes
Abstract
Ideality factor of a diode will depend on the location of the plane of maximum recombination within the diode's depletion region. It will have a minimum of one, but can range up to infinity depending on placement of the plane. Case studies analyzed in this work demonstrate better agreement with experimental data from GaN-based p-i-n diodes.
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BibTeX
@misc{celupicaliu2026understanding,
title = {{Understanding Ideality Factor in Wide-Band Gap Semiconductor Devices with Strong Recombination Planes}},
author = {Iris Celupica-Liu and Tanay Tak and Yuh-Renn Wu and James S. Speck},
howpublished = {arXiv},
year = {2026},
month = sep,
doi = {10.48550/arxiv.2609.22727},
eprint = {2609.22727},
archivePrefix = {arXiv},
url = {https://arxiv.org/abs/2609.22727},
}
RIS
TY - UNPB
TI - Understanding Ideality Factor in Wide-Band Gap Semiconductor Devices with Strong Recombination Planes
AU - Iris Celupica-Liu
AU - Tanay Tak
AU - Yuh-Renn Wu
AU - James S. Speck
PY - 2026
DA - 2026/09/19
PB - arXiv
DO - 10.48550/arxiv.2609.22727
UR - https://arxiv.org/abs/2609.22727
AB - Ideality factor of a diode will depend on the location of the plane of maximum recombination within the diode's depletion region. It will have a minimum of one, but can range up to infinity depending on placement of the plane. Case studies analyzed in this work demonstrate better agreement with experimental data from GaN-based p-i-n diodes.
ER -