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PreprintarXiv licencearXiv

Electrostatics of Chern junctions in a magnetic field

  • Robin Durand
  • Pascal Simon
  • Ion Garate
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Abstract

Electrostatic control is central to the operation of semiconductor junctions made from conventional materials. Here, we theoretically investigate the electrostatic properties of lateral junctions between two-dimensional (2D) Chern semiconductors in a perpendicular magnetic field. The spectral asymmetry of a Chern semiconductor acts as a magnetic-field-induced effective dopant density that is dependent on the Chern number. As a consequence, two regions with different Chern numbers acquire different chemical potentials at charge neutrality, leading to a built-in potential of topological origin across the junction. Using this built-in potential as a boundary condition, we solve the 2D Poisson equation to obtain the electric potential and charge density profiles, as well as the capacitance, of Chern semiconductor junctions. Our results inform the interplay between electronic topology and electrostatics in devices made from 2D materials.

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Cite

BibTeXRIS
BibTeX
@misc{durand2026electrostatics,
  title = {{Electrostatics of Chern junctions in a magnetic field}},
  author = {Robin Durand and Pascal Simon and Ion Garate},
  howpublished = {arXiv},
  year = {2026},
  month = nov,
  doi = {10.48550/arxiv.2611.06134},
  eprint = {2611.06134},
  archivePrefix = {arXiv},
  url = {https://arxiv.org/abs/2611.06134},
}
RIS
TY  - UNPB
TI  - Electrostatics of Chern junctions in a magnetic field
AU  - Robin Durand
AU  - Pascal Simon
AU  - Ion Garate
PY  - 2026
DA  - 2026/11/04
PB  - arXiv
DO  - 10.48550/arxiv.2611.06134
UR  - https://arxiv.org/abs/2611.06134
AB  - Electrostatic control is central to the operation of semiconductor junctions made from conventional materials. Here, we theoretically investigate the electrostatic properties of lateral junctions between two-dimensional (2D) Chern semiconductors in a perpendicular magnetic field. The spectral asymmetry of a Chern semiconductor acts as a magnetic-field-induced effective dopant density that is dependent on the Chern number. As a consequence, two regions with different Chern numbers acquire different chemical potentials at charge neutrality, leading to a built-in potential of topological origin across the junction. Using this built-in potential as a boundary condition, we solve the 2D Poisson equation to obtain the electric potential and charge density profiles, as well as the capacitance, of Chern semiconductor junctions. Our results inform the interplay between electronic topology and electrostatics in devices made from 2D materials.
ER  -