Conductance of silicon nanotube junctions in high magnetic fields
Abstract
We investigate coherent quantum transport through silicon nanotube (SiNT) junctions in high magnetic fields up to 60 T using a tight-binding model combined with the non-equilibrium Green's function formalism, and magnetic field included via Peierls substitution. We consider junctions of metallic nanotubes (6,0)+(6,0) and semiconducting ones (9,9)+(9,9), and examine the effects of the overlap length, inter-tube distance, magnetic-field direction, and field strength on the electronic transmission. In contrast to carbon nanotube junctions, the SiNT systems exhibit irregular transmission oscillations and do not show the emergence of highly conductive gateway states. The transmission is substantially more sensitive to a magnetic field perpendicular to the nanotube axis than to a parallel field, while increasing the field strength progressively modifies the transmission spectrum. Increasing the overlap length results in more frequent transmission oscillations, whereas increasing the inter-tube distance modifies their positions and amplitudes without changing their overall character. Generally, similar trends are observed for both types of junctions, involving metallic and semiconducting nanotubes. However, in the junction of semiconducting nanotubes, one observes peculiar additional field-dependent in-gap transmission features. These results demonstrate that the magnetic-field response of SiNT junctions is strongly governed by their geometry and differs qualitatively from that of pristine carbon nanotube junctions.
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BibTeX
@misc{kulka2026conductance,
title = {{Conductance of silicon nanotube junctions in high magnetic fields}},
author = {Teresa Kulka and Juan Alberto Canché-Martín and Irina V. Lebedeva and Jacek A. Majewski and Karolina Z. Milowska},
howpublished = {arXiv},
year = {2026},
month = sep,
doi = {10.48550/arxiv.2609.28903},
eprint = {2609.28903},
archivePrefix = {arXiv},
url = {https://arxiv.org/abs/2609.28903},
}
RIS
TY - UNPB
TI - Conductance of silicon nanotube junctions in high magnetic fields
AU - Teresa Kulka
AU - Juan Alberto Canché-Martín
AU - Irina V. Lebedeva
AU - Jacek A. Majewski
AU - Karolina Z. Milowska
PY - 2026
DA - 2026/09/24
PB - arXiv
DO - 10.48550/arxiv.2609.28903
UR - https://arxiv.org/abs/2609.28903
AB - We investigate coherent quantum transport through silicon nanotube (SiNT) junctions in high magnetic fields up to 60 T using a tight-binding model combined with the non-equilibrium Green's function formalism, and magnetic field included via Peierls substitution. We consider junctions of metallic nanotubes (6,0)+(6,0) and semiconducting ones (9,9)+(9,9), and examine the effects of the overlap length, inter-tube distance, magnetic-field direction, and field strength on the electronic transmission. In contrast to carbon nanotube junctions, the SiNT systems exhibit irregular transmission oscillations and do not show the emergence of highly conductive gateway states. The transmission is substantially more sensitive to a magnetic field perpendicular to the nanotube axis than to a parallel field, while increasing the field strength progressively modifies the transmission spectrum. Increasing the overlap length results in more frequent transmission oscillations, whereas increasing the inter-tube distance modifies their positions and amplitudes without changing their overall character. Generally, similar trends are observed for both types of junctions, involving metallic and semiconducting nanotubes. However, in the junction of semiconducting nanotubes, one observes peculiar additional field-dependent in-gap transmission features. These results demonstrate that the magnetic-field response of SiNT junctions is strongly governed by their geometry and differs qualitatively from that of pristine carbon nanotube junctions.
ER -