Half-integer quantum anomalous Hall effect in MnBi2Te4 via non-magnetic extension
Abstract
Within an ab-initio approach, we study the electronic structure and Hall response of the antiferromagnetic topological insulator film of MnBi2Te4 in contact with non-magnetic GeBi2Te4 (Bi2Te3) overlayer. The proposed junction design eliminates the exchange splitting one of the Dirac cones of the MnBi2Te4 (0001) thus manifesting a half-integer quantum anomalous Hall phase. The described recipe allows to enlarge temperature of the effect observation, enriches the diversity of topological properties of the MnBi2Te4 compound and is appropriate for other layered antiferromagnetic topological insulators. Applying the proposed heterostructure design, the half-quantized Hall phase can be established with employing other overlayer and magnetic topological insulator films.
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BibTeX
@misc{rusinov2026halfinteger,
title = {{Half-integer quantum anomalous Hall effect in MnBi$_2$Te$_4$ via non-magnetic extension}},
author = {Igor P. Rusinov and Tatiana V. Menshchikova and Evgueni V. Chulkov},
howpublished = {arXiv},
year = {2026},
month = nov,
doi = {10.48550/arxiv.2611.07844},
eprint = {2611.07844},
archivePrefix = {arXiv},
url = {https://arxiv.org/abs/2611.07844},
}
RIS
TY - UNPB
TI - Half-integer quantum anomalous Hall effect in MnBi_2Te_4 via non-magnetic extension
AU - Igor P. Rusinov
AU - Tatiana V. Menshchikova
AU - Evgueni V. Chulkov
PY - 2026
DA - 2026/11/05
PB - arXiv
DO - 10.48550/arxiv.2611.07844
UR - https://arxiv.org/abs/2611.07844
AB - Within an ab-initio approach, we study the electronic structure and Hall response of the antiferromagnetic topological insulator film of MnBi_2Te_4 in contact with non-magnetic GeBi_2Te_4 (Bi_2Te_3) overlayer. The proposed junction design eliminates the exchange splitting one of the Dirac cones of the MnBi_2Te_4 (0001) thus manifesting a half-integer quantum anomalous Hall phase. The described recipe allows to enlarge temperature of the effect observation, enriches the diversity of topological properties of the MnBi_2Te_4 compound and is appropriate for other layered antiferromagnetic topological insulators. Applying the proposed heterostructure design, the half-quantized Hall phase can be established with employing other overlayer and magnetic topological insulator films.
ER -