Temperature-Independent Logarithmic Current Slope in Interdiffusion-Broadened Silicon pn Junction toward Low-Power Thermometry
Abstract
With the development of cryogenic technologies such as quantum computing, there is an increasing need for low-power cryogenic thermometers that minimize self-heating. Here, we report an anomalous temperature-independent logarithmic current slope, d(ln J)/dV, in heavily doped silicon p+n+ junctions with significant dopant interdiffusion and highlight the advantages of our device as a low-power, cryogenic thermometer. Electrical characterizations from 2 to 420 K reveal that, at low forward bias, d(ln J)/dV remains nearly constant, which yields a voltage-temperature responsivity that is nearly independent of bias current. The observed transport cannot be fully understood with conventional diffusion or direct band-to-band tunneling. Instead, the results suggest the contribution of trap-assisted tunneling. These results establish interdiffusion-broadened silicon p+n+ junctions as a route to low-power temperature sensors while providing insight into carrier transport in heavily doped semiconductor junctions.
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BibTeX
@misc{hong2026temperatureindependent,
title = {{Temperature-Independent Logarithmic Current Slope in Interdiffusion-Broadened Silicon pn Junction toward Low-Power Thermometry}},
author = {Sungjae Hong and Jeffrey A. Ivie and Tzu-Ming Lu and Christopher R. Allemang},
howpublished = {arXiv},
year = {2026},
month = nov,
doi = {10.48550/arxiv.2611.03593},
eprint = {2611.03593},
archivePrefix = {arXiv},
url = {https://arxiv.org/abs/2611.03593},
}
RIS
TY - UNPB
TI - Temperature-Independent Logarithmic Current Slope in Interdiffusion-Broadened Silicon pn Junction toward Low-Power Thermometry
AU - Sungjae Hong
AU - Jeffrey A. Ivie
AU - Tzu-Ming Lu
AU - Christopher R. Allemang
PY - 2026
DA - 2026/11/02
PB - arXiv
DO - 10.48550/arxiv.2611.03593
UR - https://arxiv.org/abs/2611.03593
AB - With the development of cryogenic technologies such as quantum computing, there is an increasing need for low-power cryogenic thermometers that minimize self-heating. Here, we report an anomalous temperature-independent logarithmic current slope, d(ln J)/dV, in heavily doped silicon p^+n^+ junctions with significant dopant interdiffusion and highlight the advantages of our device as a low-power, cryogenic thermometer. Electrical characterizations from 2 to 420 K reveal that, at low forward bias, d(ln J)/dV remains nearly constant, which yields a voltage-temperature responsivity that is nearly independent of bias current. The observed transport cannot be fully understood with conventional diffusion or direct band-to-band tunneling. Instead, the results suggest the contribution of trap-assisted tunneling. These results establish interdiffusion-broadened silicon p^+n^+ junctions as a route to low-power temperature sensors while providing insight into carrier transport in heavily doped semiconductor junctions.
ER -