Plateau–Rayleigh Instability–Driven Shell-First Growth of (Ge, Si1– x Ge x )–AlN Core–Shell Crystals Exhibiting Telecom E-Band Photoluminescence
5 affiliations
- 1Electronics and Telecommunications Research Institute (ETRI) , , ,
- 2LNBS Co., Ltd. , 270 Jungang-daero, Dong-gu , ,
- 3Kookmin University , , ,
- 4National Korea Maritime and Ocean University , , ,
- 5Nagoya University , , ,
Abstract
Si and Ge are technologically important semiconductors for electronic, photovoltaic, and optoelectronic applications. Herein, we report mixed-source hydride vapor phase epitaxial growth of (Ge, Si1–xGex)–AlN core–shell crystals on Al-based nanoabsorbers. Nano-CT and microscopy resolve hollow, partially filled, and filled morphologies that together support a Plateau–Rayleigh-instability-mediated shell-first model in which an Al-derived shell-like structure precedes filling by Ge-containing or Si–Ge-containing material. Electron microscopy, energy-dispersive X-ray spectroscopy, and Raman measurements provide complementary structural and compositional context, including local observations consistent with 2H-like Si domains. Four room-temperature photoluminescence spectra recorded under 532 nm excitation show telecom E-band features with sampled maxima at approximately 1371.9, 1377.0, 1381.1, and 1391.8 nm. Additional archived nominal-setting records for four spectral windows are presented as qualitative excitation-setting comparisons. Audited HSE Δ-self-consistent-field end points and PBE scaling calculations evaluate neutral CSi–Oi as a candidate model, while newly added formation, association, k-point, and cell-size sensitivity tests define the scope of that comparison. The optical data are therefore reported without a peak-specific microscopic or single-emitter assignment. The combined results establish the shell-first growth morphology and document room-temperature E-band photoluminescence in group-IV/III-nitride core–shell material.
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BibTeX
@article{choi2026plateaurayleigh,
title = {{Plateau–Rayleigh Instability–Driven Shell-First Growth of (Ge, Si1– x Ge x )–AlN Core–Shell Crystals Exhibiting Telecom E-Band Photoluminescence}},
author = {Sunghoon Choi and Kyoung Hwa Kim and Won Joon Bong and Jun-Seok Park and Eunmin Kwon and Sohee Kim and Myungjun Kim and Donghyeon Jeong and Jae Hak Lee and Takeshi Kato and Yoshio Honda and Anna Honda and Hyung Soo Ahn},
journal = {ACS Omega},
year = {2026},
month = oct,
doi = {10.1021/acsomega.6c06175},
url = {https://pubs.acs.org/acsodf/article/11/41/63138/5447088/Plateau-Rayleigh-Instability-Driven-Shell-First},
note = {CC BY-NC-ND 4.0},
}
RIS
TY - JOUR
TI - Plateau–Rayleigh Instability–Driven Shell-First Growth of (Ge, Si1– x Ge x )–AlN Core–Shell Crystals Exhibiting Telecom E-Band Photoluminescence
AU - Sunghoon Choi
AU - Kyoung Hwa Kim
AU - Won Joon Bong
AU - Jun-Seok Park
AU - Eunmin Kwon
AU - Sohee Kim
AU - Myungjun Kim
AU - Donghyeon Jeong
AU - Jae Hak Lee
AU - Takeshi Kato
AU - Yoshio Honda
AU - Anna Honda
AU - Hyung Soo Ahn
PY - 2026
DA - 2026/10/08
JO - ACS Omega
DO - 10.1021/acsomega.6c06175
UR - https://pubs.acs.org/acsodf/article/11/41/63138/5447088/Plateau-Rayleigh-Instability-Driven-Shell-First
AB - Si and Ge are technologically important semiconductors for electronic, photovoltaic, and optoelectronic applications. Herein, we report mixed-source hydride vapor phase epitaxial growth of (Ge, Si1–xGex)–AlN core–shell crystals on Al-based nanoabsorbers. Nano-CT and microscopy resolve hollow, partially filled, and filled morphologies that together support a Plateau–Rayleigh-instability-mediated shell-first model in which an Al-derived shell-like structure precedes filling by Ge-containing or Si–Ge-containing material. Electron microscopy, energy-dispersive X-ray spectroscopy, and Raman measurements provide complementary structural and compositional context, including local observations consistent with 2H-like Si domains. Four room-temperature photoluminescence spectra recorded under 532 nm excitation show telecom E-band features with sampled maxima at approximately 1371.9, 1377.0, 1381.1, and 1391.8 nm. Additional archived nominal-setting records for four spectral windows are presented as qualitative excitation-setting comparisons. Audited HSE Δ-self-consistent-field end points and PBE scaling calculations evaluate neutral CSi–Oi as a candidate model, while newly added formation, association, k-point, and cell-size sensitivity tests define the scope of that comparison. The optical data are therefore reported without a peak-specific microscopic or single-emitter assignment. The combined results establish the shell-first growth morphology and document room-temperature E-band photoluminescence in group-IV/III-nitride core–shell material.
SN - 2470-1343
ER -