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PreprintCC BY 4.0arXiv

Engineering nonlinear spin-orbit torque driven by intra-band transport in MoSe2/CrI3 and WSe2/CrI3 van der Waals heterostructures

  • Leyla Majidi
  • Azadeh Faridi
  • Reza Asgari
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Abstract

The role of nonlinear carrier dynamics in current-driven spin phenomena remains poorly understood in van der Waals magnetic heterostructures. Here, we investigate the spin polarization and the resulting spin-orbit torque (SOT) in transition-metal dichalcogenide/chromium iodide (TMDC/CrI3) heterostructures, focusing on WSe2/CrI3 and MoSe2/CrI3, in the zero-Rashba spin-orbit coupling (SOC) limit and beyond the linear-response regime. We find that linear spin polarization is forbidden by symmetry, making nonlinear intraband transitions the dominant mechanism in this regime. Consequently, the current-driven spin response differs fundamentally from conventional linear-response predictions. The resulting nonlinear spin polarization generates a purely field-like torque whose magnitude and sign depend sensitively on the chemical potential and doping type, with pronounced asymmetries between n- and p-doped systems. A strong material dependence is also observed: n-doped MoSe2/CrI3 exhibits a torque nearly an order of magnitude larger than that of WSe2/CrI3, together with two sign reversals, reflecting differences in their SOC and proximity-exchange parameters. Structural and electrostatic control through the twist angle and gate electric field provides additional means of tuning the nonlinear torque, including substantial modulation and controllable sign reversals. These findings establish TMDC/CrI3 bilayers as a versatile platform for engineering nonlinear spin-orbit phenomena in ultrathin, low-power spintronic devices.

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Cite

BibTeXRIS
BibTeX
@misc{majidi2026engineering,
  title = {{Engineering nonlinear spin-orbit torque driven by intra-band transport in MoSe$_2$/CrI$_3$ and WSe$_2$/CrI$_3$ van der Waals heterostructures}},
  author = {Leyla Majidi and Azadeh Faridi and Reza Asgari},
  howpublished = {arXiv},
  year = {2026},
  month = sep,
  doi = {10.48550/arxiv.2609.30430},
  eprint = {2609.30430},
  archivePrefix = {arXiv},
  url = {https://arxiv.org/abs/2609.30430},
  note = {CC BY 4.0},
}
RIS
TY  - UNPB
TI  - Engineering nonlinear spin-orbit torque driven by intra-band transport in MoSe_2/CrI_3 and WSe_2/CrI_3 van der Waals heterostructures
AU  - Leyla Majidi
AU  - Azadeh Faridi
AU  - Reza Asgari
PY  - 2026
DA  - 2026/09/24
PB  - arXiv
DO  - 10.48550/arxiv.2609.30430
UR  - https://arxiv.org/abs/2609.30430
AB  - The role of nonlinear carrier dynamics in current-driven spin phenomena remains poorly understood in van der Waals magnetic heterostructures. Here, we investigate the spin polarization and the resulting spin-orbit torque (SOT) in transition-metal dichalcogenide/chromium iodide (TMDC/CrI_3) heterostructures, focusing on WSe_2/CrI_3 and MoSe_2/CrI_3, in the zero-Rashba spin-orbit coupling (SOC) limit and beyond the linear-response regime. We find that linear spin polarization is forbidden by symmetry, making nonlinear intraband transitions the dominant mechanism in this regime. Consequently, the current-driven spin response differs fundamentally from conventional linear-response predictions. The resulting nonlinear spin polarization generates a purely field-like torque whose magnitude and sign depend sensitively on the chemical potential and doping type, with pronounced asymmetries between n- and p-doped systems. A strong material dependence is also observed: n-doped MoSe_2/CrI_3 exhibits a torque nearly an order of magnitude larger than that of WSe_2/CrI_3, together with two sign reversals, reflecting differences in their SOC and proximity-exchange parameters. Structural and electrostatic control through the twist angle and gate electric field provides additional means of tuning the nonlinear torque, including substantial modulation and controllable sign reversals. These findings establish TMDC/CrI_3 bilayers as a versatile platform for engineering nonlinear spin-orbit phenomena in ultrathin, low-power spintronic devices.
ER  -