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PreprintCC BY-NC-ND 4.0arXiv

Atomic-Scale Phonon Engineering for Enhanced Thermal Transport in Wafer-Scale-Bonded β-Ga2O3/SiC Heterostructures

  • J. Liu
  • R. Mao
  • Z. Liu
  • Y. Yin
  • S. Li
  • F. Sun
  • B. Liu
  • Z. Wang
  • P. Gao
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Abstract

Bonding semiconductors to substrates with high thermal conductivity is a promising way to solve the heat-dissipation problem of materials that transport heat poorly, and it avoids the lattice-matching constraints of conventional epitaxy. However, the lattice mismatch remains, leaving the two materials with mismatched phonon states, while poor interface quality scatters phonons even more. Together, these effects block phonon transport across the bonded interface and make interfacial thermal resistance a critical bottleneck, calling for careful interface engineering. Here, β-Ga2O3/SiC serves as a model system for a phonon-bridging strategy. A nanoscale crystalline Si interlayer is designed and fabricated by wafer bonding to bridge the mismatched phonon states of β-Ga2O3 and SiC. Spatially resolved electron energy-loss spectroscopy and molecular dynamics simulations show that this Si layer opens new channels for phonon transport across the interface. The engineered interface raises the interfacial thermal conductance to 165 MW m−2 K−1 -- the highest value yet reported for β-Ga2O3/SiC interfaces. These results offer an effective way to manage heat in β-Ga2O3 devices and point to a general approach for building phonon-bridging interfaces that improve heat dissipation in heterogeneous systems.

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Cite

BibTeXRIS
BibTeX
@misc{liu2026atomicscale,
  title = {{Atomic-Scale Phonon Engineering for Enhanced Thermal Transport in Wafer-Scale-Bonded $β$-Ga$_2$O$_3$/SiC Heterostructures}},
  author = {J. Liu and R. Mao and Z. Liu and Y. Yin and S. Li and F. Sun and B. Liu and Z. Wang and P. Gao},
  howpublished = {arXiv},
  year = {2026},
  month = nov,
  doi = {10.48550/arxiv.2611.05810},
  eprint = {2611.05810},
  archivePrefix = {arXiv},
  url = {https://arxiv.org/abs/2611.05810},
  note = {CC BY-NC-ND 4.0},
}
RIS
TY  - UNPB
TI  - Atomic-Scale Phonon Engineering for Enhanced Thermal Transport in Wafer-Scale-Bonded β-Ga_2O_3/SiC Heterostructures
AU  - J. Liu
AU  - R. Mao
AU  - Z. Liu
AU  - Y. Yin
AU  - S. Li
AU  - F. Sun
AU  - B. Liu
AU  - Z. Wang
AU  - P. Gao
PY  - 2026
DA  - 2026/11/04
PB  - arXiv
DO  - 10.48550/arxiv.2611.05810
UR  - https://arxiv.org/abs/2611.05810
AB  - Bonding semiconductors to substrates with high thermal conductivity is a promising way to solve the heat-dissipation problem of materials that transport heat poorly, and it avoids the lattice-matching constraints of conventional epitaxy. However, the lattice mismatch remains, leaving the two materials with mismatched phonon states, while poor interface quality scatters phonons even more. Together, these effects block phonon transport across the bonded interface and make interfacial thermal resistance a critical bottleneck, calling for careful interface engineering. Here, β-Ga_2O_3/SiC serves as a model system for a phonon-bridging strategy. A nanoscale crystalline Si interlayer is designed and fabricated by wafer bonding to bridge the mismatched phonon states of β-Ga_2O_3 and SiC. Spatially resolved electron energy-loss spectroscopy and molecular dynamics simulations show that this Si layer opens new channels for phonon transport across the interface. The engineered interface raises the interfacial thermal conductance to 165 MW m^−2 K^−1 -- the highest value yet reported for β-Ga_2O_3/SiC interfaces. These results offer an effective way to manage heat in β-Ga_2O_3 devices and point to a general approach for building phonon-bridging interfaces that improve heat dissipation in heterogeneous systems.
ER  -