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Peer-reviewedCC BYAdvanced Electronic Materials

Enhanced Thermoelectric Performance of GeTe‐Sb2Te3 Pseudo‐Binary Phase Change Material Through Stoichiometry Optimization

  • Nur Qalishah Adanan1
  • Sichao Li2
  • Syed Zulfiqar Hussain Shah3
  • Durga Venkata Maheswar Repaka4
  • Joel K. W. Yang1
  • Iris Nandhakumar3
  • Kedar Hippalgaonkar4
  • Sunmi Shin5
  • Robert E. Simpson1
  • Pawan Kumar4
5 affiliations
  1. 1Engineering Product Development Singapore University of Technology and Design Singapore Singapore
  2. 2School of Electronic Science & Engineering Southeast University Nanjing China
  3. 3Department of Chemistry University of Southampton Southampton UK
  4. 4Institute of Materials Research and Engineering Agency for Science Technology and Research Singapore Singapore
  5. 5Department of Mechanical Engineering National University of Singapore Singapore Singapore
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Abstract

Pseudo‐Binary GeTe‐Sb2Te3 materials have demonstrated promising thermoelectric performance in intermediate temperature (500‐800 K) range. In this work, by co‐sputtering of Ge45Te52S3 and Sb2Te3 a composition spreads with varying Ge:Sb:Te ratios were fabricated to identify specific composition regimes with the highest thermoelectric performance. From the thermoelectric measurements, (Ge5Sb37Te58) demonstrated the highest power factor values. Thermal conductivity measurements were performed on the different compositions with higher power factor values. Maximum zT values ranging from 0.36 ± 0.08 to 0.81 ± 0.15 for samples Ge9Sb33Te58 to Ge5Sb37Te58 at 300°C were achieved. The co‐sputtering technique establishes an effective high‐throughput approach to systematically map the relationship between composition and thermoelectric properties across a wide range of compositions in a single deposition run.

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Cite

BibTeXRIS
BibTeX
@article{adanan2026enhanced,
  title = {{Enhanced Thermoelectric Performance of GeTe‐Sb2Te3 Pseudo‐Binary Phase Change Material Through Stoichiometry Optimization}},
  author = {Nur Qalishah Adanan and Sichao Li and Syed Zulfiqar Hussain Shah and Durga Venkata Maheswar Repaka and Joel K. W. Yang and Iris Nandhakumar and Kedar Hippalgaonkar and Sunmi Shin and Robert E. Simpson and Pawan Kumar},
  journal = {Advanced Electronic Materials},
  year = {2026},
  month = oct,
  doi = {10.1002/aelm.70609},
  url = {https://doi.org/10.1002/aelm.70609},
  note = {CC BY},
}
RIS
TY  - JOUR
TI  - Enhanced Thermoelectric Performance of GeTe‐Sb2Te3 Pseudo‐Binary Phase Change Material Through Stoichiometry Optimization
AU  - Nur Qalishah Adanan
AU  - Sichao Li
AU  - Syed Zulfiqar Hussain Shah
AU  - Durga Venkata Maheswar Repaka
AU  - Joel K. W. Yang
AU  - Iris Nandhakumar
AU  - Kedar Hippalgaonkar
AU  - Sunmi Shin
AU  - Robert E. Simpson
AU  - Pawan Kumar
PY  - 2026
DA  - 2026/10/26
JO  - Advanced Electronic Materials
DO  - 10.1002/aelm.70609
UR  - https://doi.org/10.1002/aelm.70609
AB  - Pseudo‐Binary GeTe‐Sb2Te3 materials have demonstrated promising thermoelectric performance in intermediate temperature (500‐800 K) range. In this work, by co‐sputtering of Ge45Te52S3 and Sb2Te3 a composition spreads with varying Ge:Sb:Te ratios were fabricated to identify specific composition regimes with the highest thermoelectric performance. From the thermoelectric measurements, (Ge5Sb37Te58) demonstrated the highest power factor values. Thermal conductivity measurements were performed on the different compositions with higher power factor values. Maximum zT values ranging from 0.36 ± 0.08 to 0.81 ± 0.15 for samples Ge9Sb33Te58 to Ge5Sb37Te58 at 300°C were achieved. The co‐sputtering technique establishes an effective high‐throughput approach to systematically map the relationship between composition and thermoelectric properties across a wide range of compositions in a single deposition run.
SN  - 2199-160X
ER  -