Perpendicular Anisotropy and g-Factor of Sputtered Ni Films on Si(111) Studied by Angle-Dependent Ferromagnetic Resonance
Abstract
Ni films with thicknesses of 312 and 1011\,Å were grown on Si(111) by dc magnetron sputtering at room temperature and studied by atomic force microscopy, grazing-incidence X-ray diffraction, X-ray reflectivity, magnetometry and angle-dependent ferromagnetic resonance. Both films are polycrystalline fcc Ni with smooth surfaces, a bulk-like (111) lattice spacing and a saturation magnetization of ≈480\,emu\,cm−3, and both are magnetized in plane. The angular dependence of the resonance field, from the film plane to the film normal, is described by a uniaxial anisotropy model with first- and second-order terms. From this model, g = 2.160±0.005 and 2.101±0.014 and effective perpendicular anisotropies of (6.0±0.4)×105 and (4.5±0.6)×105\,erg\,cm−3 were obtained for the thinner and thicker film, respectively. The conventional analysis of only the in-plane and perpendicular resonances gives g-factors that are lower by 0.02--0.04. The perpendicular linewidths give upper limits for the Gilbert damping of α≤ 0.030 and ≤ 0.038.
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BibTeX
@misc{singh2026perpendicular,
title = {{Perpendicular Anisotropy and g-Factor of Sputtered Ni Films on Si(111) Studied by Angle-Dependent Ferromagnetic Resonance}},
author = {Dushyant Singh and Tharundev V V and Subha Maity and Subhavenkadesh SS and Vigneshwari SR and Krista R. Khiangte},
howpublished = {arXiv},
year = {2026},
month = oct,
doi = {10.48550/arxiv.2610.33637},
eprint = {2610.33637},
archivePrefix = {arXiv},
url = {https://arxiv.org/abs/2610.33637},
note = {CC BY-NC-ND 4.0},
}
RIS
TY - UNPB
TI - Perpendicular Anisotropy and g-Factor of Sputtered Ni Films on Si(111) Studied by Angle-Dependent Ferromagnetic Resonance
AU - Dushyant Singh
AU - Tharundev V V
AU - Subha Maity
AU - Subhavenkadesh SS
AU - Vigneshwari SR
AU - Krista R. Khiangte
PY - 2026
DA - 2026/10/24
PB - arXiv
DO - 10.48550/arxiv.2610.33637
UR - https://arxiv.org/abs/2610.33637
AB - Ni films with thicknesses of 312 and 1011\,Å were grown on Si(111) by dc magnetron sputtering at room temperature and studied by atomic force microscopy, grazing-incidence X-ray diffraction, X-ray reflectivity, magnetometry and angle-dependent ferromagnetic resonance. Both films are polycrystalline fcc Ni with smooth surfaces, a bulk-like (111) lattice spacing and a saturation magnetization of ≈480\,emu\,cm^−3, and both are magnetized in plane. The angular dependence of the resonance field, from the film plane to the film normal, is described by a uniaxial anisotropy model with first- and second-order terms. From this model, g = 2.160±0.005 and 2.101±0.014 and effective perpendicular anisotropies of (6.0±0.4)×10^5 and (4.5±0.6)×10^5\,erg\,cm^−3 were obtained for the thinner and thicker film, respectively. The conventional analysis of only the in-plane and perpendicular resonances gives g-factors that are lower by 0.02--0.04. The perpendicular linewidths give upper limits for the Gilbert damping of α≤ 0.030 and ≤ 0.038.
ER -