Electric field control of anisotropic spin traffic between spin-filtering and magnon-scattering in a layered antiferromagnet
Abstract
Layered A-type antiferromagnetic (AFM) semiconductors offer a unique platform for spintronic devices by combining robust magnetism with gate-tunable semiconducting properties. We present a dual-gate field-effect transistor based on CrSBr, a layered A-type AFM with pronounced transport anisotropy and complex spin dynamics. Our device provides independent control over carrier density and displacement field. Systematic transport measurements reveal that the displacement field, rather than doping, predominantly governs the sign and magnitude of magnetoresistance ratio (MRR). We identify the origins of both negative and positive MRR components and connect them to interlayer and intralayer spin-dependent transport mechanisms. We interpret these findings with ab initio calculations and an effective spin-circuit model that reproduces the anisotropic magnetotransport. Our results identify the displacement field as an efficient electrical control parameter of spin transport in CrSBr and suggest that multi-gate architectures could provide similar control in other layered antiferromagnetic semiconductors.
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BibTeX
@misc{soliman2026electric,
title = {{Electric field control of anisotropic spin traffic between spin-filtering and magnon-scattering in a layered antiferromagnet}},
author = {Mohamed Soliman and Jaime Garrido Aldea and Davy Borowski and Dorye L. Esteras and Neeraj K. Rajak and Niels Chapuis and Abdelkarim Ouerghi and Arnaud Gloppe and Jérôme Robert and Bernard Doudin and Takashi Taniguchi and Kenji Watanabe and José H. García and Stephan Roche and Jean-François Dayen},
howpublished = {arXiv},
year = {2026},
month = oct,
doi = {10.48550/arxiv.2610.40423},
eprint = {2610.40423},
archivePrefix = {arXiv},
url = {https://arxiv.org/abs/2610.40423},
note = {CC BY 4.0},
}
RIS
TY - UNPB
TI - Electric field control of anisotropic spin traffic between spin-filtering and magnon-scattering in a layered antiferromagnet
AU - Mohamed Soliman
AU - Jaime Garrido Aldea
AU - Davy Borowski
AU - Dorye L. Esteras
AU - Neeraj K. Rajak
AU - Niels Chapuis
AU - Abdelkarim Ouerghi
AU - Arnaud Gloppe
AU - Jérôme Robert
AU - Bernard Doudin
AU - Takashi Taniguchi
AU - Kenji Watanabe
AU - José H. García
AU - Stephan Roche
AU - Jean-François Dayen
PY - 2026
DA - 2026/10/29
PB - arXiv
DO - 10.48550/arxiv.2610.40423
UR - https://arxiv.org/abs/2610.40423
AB - Layered A-type antiferromagnetic (AFM) semiconductors offer a unique platform for spintronic devices by combining robust magnetism with gate-tunable semiconducting properties. We present a dual-gate field-effect transistor based on CrSBr, a layered A-type AFM with pronounced transport anisotropy and complex spin dynamics. Our device provides independent control over carrier density and displacement field. Systematic transport measurements reveal that the displacement field, rather than doping, predominantly governs the sign and magnitude of magnetoresistance ratio (MRR). We identify the origins of both negative and positive MRR components and connect them to interlayer and intralayer spin-dependent transport mechanisms. We interpret these findings with ab initio calculations and an effective spin-circuit model that reproduces the anisotropic magnetotransport. Our results identify the displacement field as an efficient electrical control parameter of spin transport in CrSBr and suggest that multi-gate architectures could provide similar control in other layered antiferromagnetic semiconductors.
ER -