Observation of Magnetic-Anisotropy Crossover and High-Temperature Skyrmions in the Dirac Magnet Fe3Ge with a Distorted Kagome Lattice
Abstract
Topological materials that simultaneously host robust high-temperature skyrmions and nontrivial electronic band structures have attracted tremendous interest owing to their distinctive advantages for both fundamental research and prospective technological applications. Here, we report the observation of robust skyrmions in the Dirac kagome magnet Fe3Ge, which exhibits a high Curie temperature of ~ 650 K. At room temperature, Fe3Ge shows a large intrinsic anomalous Hall conductivity of ~ 380 Ω-1cm-1, originating from its nontrivial electronic band topology. Systematic magnetization measurements reveal a spin reorientation transition at ~ 375 K, indicating a crossover from easy-plane to easy-axis magnetic anisotropy. Below the spin reorientation temperature, a large topological Hall effect is observed, arising from microscopic noncoplanar spin structures. Lorentz transmission electron microscopy shows that mesoscopic skyrmions are stabilized in the easy-axis magnetic anisotropy regime and persist over an exceptionally wide temperature window of 375-650 K, far exceeding that of most previously reported skyrmion-hosting materials. These results establish Fe3Ge as a promising platform for exploring diverse topological properties, with strong potential for advancing future high-temperature spintronic applications, ranging from next-generation information storage to logic computing devices.
Versions
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BibTeX
@misc{huang2026observation,
title = {{Observation of Magnetic-Anisotropy Crossover and High-Temperature Skyrmions in the Dirac Magnet Fe3Ge with a Distorted Kagome Lattice}},
author = {Yalei Huang and Xiaowei Lv and Bin Li and Chunqiang Xu and Dhanarajagopal Alltrin and Xiaoxuan Ma and Wanting Yang and Wei Zhou and Xiangzhuo Xing and Wen-Chin Lin and Raman Sankar and Michael Smidman and Shixun Cao and Dong Qian and Renchao Che and Xiaofeng Xu},
howpublished = {arXiv},
year = {2026},
month = sep,
doi = {10.48550/arxiv.2609.10081},
eprint = {2609.10081},
archivePrefix = {arXiv},
url = {https://arxiv.org/abs/2609.10081},
}
RIS
TY - UNPB
TI - Observation of Magnetic-Anisotropy Crossover and High-Temperature Skyrmions in the Dirac Magnet Fe3Ge with a Distorted Kagome Lattice
AU - Yalei Huang
AU - Xiaowei Lv
AU - Bin Li
AU - Chunqiang Xu
AU - Dhanarajagopal Alltrin
AU - Xiaoxuan Ma
AU - Wanting Yang
AU - Wei Zhou
AU - Xiangzhuo Xing
AU - Wen-Chin Lin
AU - Raman Sankar
AU - Michael Smidman
AU - Shixun Cao
AU - Dong Qian
AU - Renchao Che
AU - Xiaofeng Xu
PY - 2026
DA - 2026/09/09
PB - arXiv
DO - 10.48550/arxiv.2609.10081
UR - https://arxiv.org/abs/2609.10081
AB - Topological materials that simultaneously host robust high-temperature skyrmions and nontrivial electronic band structures have attracted tremendous interest owing to their distinctive advantages for both fundamental research and prospective technological applications. Here, we report the observation of robust skyrmions in the Dirac kagome magnet Fe3Ge, which exhibits a high Curie temperature of ~ 650 K. At room temperature, Fe3Ge shows a large intrinsic anomalous Hall conductivity of ~ 380 Ω-1cm-1, originating from its nontrivial electronic band topology. Systematic magnetization measurements reveal a spin reorientation transition at ~ 375 K, indicating a crossover from easy-plane to easy-axis magnetic anisotropy. Below the spin reorientation temperature, a large topological Hall effect is observed, arising from microscopic noncoplanar spin structures. Lorentz transmission electron microscopy shows that mesoscopic skyrmions are stabilized in the easy-axis magnetic anisotropy regime and persist over an exceptionally wide temperature window of 375-650 K, far exceeding that of most previously reported skyrmion-hosting materials. These results establish Fe3Ge as a promising platform for exploring diverse topological properties, with strong potential for advancing future high-temperature spintronic applications, ranging from next-generation information storage to logic computing devices.
ER -