Optically Coupled Noise Spectroscopy Quantifies Defect Passivation in Monolayer MoS2 FETs
Abstract
Transition metal dichalcogenide monolayers are promising materials for electronic and photonic applications, yet the performance of chemical vapour deposition grown samples is severely limited by native sulphur vacancies that introduce mid-gap trap states, degrade carrier mobility, and elevate electrical noise. Here we investigate octanethiol passivation of sulphur vacancies in monolayer MoS2 field effect transistors, combining x-ray photoelectron spectroscopy, photoluminescence, and Raman scattering with electrical transport and optically coupled low-frequency noise spectroscopy. Thiol treatment reduces the sulphur vacancy concentration from 7% to 4%, reducing the free electron density. Electrically, it increases the device resistance 35-fold while restoring gate switching with an on/off ratio of 10^4 and improving field-effect mobility from 1 to 5 cm^2/Vs. Low frequency noise spectroscopy directly quantifies the defect suppression: the Hooge parameter alpha_H drops by more than two orders of magnitude after passivation. Gate-dependent noise confirms carrier mobility fluctuation as the dominant dark noise mechanism, while optical excitation drives a crossover to carrier number fluctuation dominated noise, reflecting preferential interaction of photogenerated carriers with residual vacancy states via generation-recombination trapping, a mechanistic distinction inaccessible to gate-bias measurements alone. Density functional theory calculations corroborate these findings, showing suppression of vacancy-induced mid-gap states by more than half and partial restoration of the intrinsic bandgap. These results establish optically coupled low-frequency noise spectroscopy as a sensitive, low-cost, and non-destructive tool for quantifying defect passivation in TMDC-based devices.
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BibTeX
@misc{chattopadhyay2026optically,
title = {{Optically Coupled Noise Spectroscopy Quantifies Defect Passivation in Monolayer MoS2 FETs}},
author = {Shashwata Chattopadhyay and Soumyadip Hazra and Sraboni Dey and Kritika Sharu and Renjith Nadarajan and Arijit Kayal and Joy Mitra},
howpublished = {arXiv},
year = {2026},
month = oct,
doi = {10.48550/arxiv.2608.21604},
eprint = {2608.21604},
archivePrefix = {arXiv},
url = {https://arxiv.org/abs/2608.21604},
}
RIS
TY - UNPB
TI - Optically Coupled Noise Spectroscopy Quantifies Defect Passivation in Monolayer MoS2 FETs
AU - Shashwata Chattopadhyay
AU - Soumyadip Hazra
AU - Sraboni Dey
AU - Kritika Sharu
AU - Renjith Nadarajan
AU - Arijit Kayal
AU - Joy Mitra
PY - 2026
DA - 2026/10/12
PB - arXiv
DO - 10.48550/arxiv.2608.21604
UR - https://arxiv.org/abs/2608.21604
AB - Transition metal dichalcogenide monolayers are promising materials for electronic and photonic applications, yet the performance of chemical vapour deposition grown samples is severely limited by native sulphur vacancies that introduce mid-gap trap states, degrade carrier mobility, and elevate electrical noise. Here we investigate octanethiol passivation of sulphur vacancies in monolayer MoS2 field effect transistors, combining x-ray photoelectron spectroscopy, photoluminescence, and Raman scattering with electrical transport and optically coupled low-frequency noise spectroscopy. Thiol treatment reduces the sulphur vacancy concentration from 7% to 4%, reducing the free electron density. Electrically, it increases the device resistance 35-fold while restoring gate switching with an on/off ratio of 10^4 and improving field-effect mobility from 1 to 5 cm^2/Vs. Low frequency noise spectroscopy directly quantifies the defect suppression: the Hooge parameter alpha_H drops by more than two orders of magnitude after passivation. Gate-dependent noise confirms carrier mobility fluctuation as the dominant dark noise mechanism, while optical excitation drives a crossover to carrier number fluctuation dominated noise, reflecting preferential interaction of photogenerated carriers with residual vacancy states via generation-recombination trapping, a mechanistic distinction inaccessible to gate-bias measurements alone. Density functional theory calculations corroborate these findings, showing suppression of vacancy-induced mid-gap states by more than half and partial restoration of the intrinsic bandgap. These results establish optically coupled low-frequency noise spectroscopy as a sensitive, low-cost, and non-destructive tool for quantifying defect passivation in TMDC-based devices.
ER -