Optical Thermometry in Monolayer WS2: Raman and Photoluminescence Spectroscopy from 5 K to 1273 K
Abstract
Reliable temperature measurement is essential for characterizing and engineering two-dimensional (2D) semiconductor devices, yet optical thermometry of 2D materials has so far been demonstrated only over narrow temperature windows spanning a few hundred kelvin. Here, we establish a comprehensive optical thermometry framework for monolayer WS2 from 5~K to 1273~K. We show that: (i) the out-of-plane A1g Raman mode shifts linearly with temperature above 100~K, with a slope of -0.0138 cm^{-1}/K in non-encapsulated WS2 (fitted over 298-1223~K) and a measurably smaller slope of -0.0121 cm^{-1}/K in an hBN-encapsulated sample (fitted over 100-1273~K); (ii) photoluminescence spectra measured over the same 5--1273~K range provide an independent optical indicator of the temperature: the neutral-exciton emission redshifts continuously with temperature and is well described by the semi-empirical Pässler model. The two indicators probe distinct physical mechanisms, lattice anharmonicity and bandgap renormalization, and together provide contact-free thermometry for monolayer WS2 from 5~K to 1273~K, an approach applicable to 2D semiconductors more broadly.
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BibTeX
@misc{lee2026optical,
title = {{Optical Thermometry in Monolayer WS2: Raman and Photoluminescence Spectroscopy from 5 K to 1273 K}},
author = {Gyeongjun Lee and Antoine Borel and Takashi Taniguchi and Kenji Watanabe and Fausto Sirotti and Fabian Cadiz},
howpublished = {arXiv},
year = {2026},
month = oct,
doi = {10.48550/arxiv.2610.35214},
eprint = {2610.35214},
archivePrefix = {arXiv},
url = {https://arxiv.org/abs/2610.35214},
note = {CC BY 4.0},
}
RIS
TY - UNPB
TI - Optical Thermometry in Monolayer WS2: Raman and Photoluminescence Spectroscopy from 5 K to 1273 K
AU - Gyeongjun Lee
AU - Antoine Borel
AU - Takashi Taniguchi
AU - Kenji Watanabe
AU - Fausto Sirotti
AU - Fabian Cadiz
PY - 2026
DA - 2026/10/26
PB - arXiv
DO - 10.48550/arxiv.2610.35214
UR - https://arxiv.org/abs/2610.35214
AB - Reliable temperature measurement is essential for characterizing and engineering two-dimensional (2D) semiconductor devices, yet optical thermometry of 2D materials has so far been demonstrated only over narrow temperature windows spanning a few hundred kelvin. Here, we establish a comprehensive optical thermometry framework for monolayer WS2 from 5~K to 1273~K. We show that: (i) the out-of-plane A1g Raman mode shifts linearly with temperature above 100~K, with a slope of -0.0138 cm^{-1}/K in non-encapsulated WS2 (fitted over 298-1223~K) and a measurably smaller slope of -0.0121 cm^{-1}/K in an hBN-encapsulated sample (fitted over 100-1273~K); (ii) photoluminescence spectra measured over the same 5--1273~K range provide an independent optical indicator of the temperature: the neutral-exciton emission redshifts continuously with temperature and is well described by the semi-empirical Pässler model. The two indicators probe distinct physical mechanisms, lattice anharmonicity and bandgap renormalization, and together provide contact-free thermometry for monolayer WS2 from 5~K to 1273~K, an approach applicable to 2D semiconductors more broadly.
ER -