Quantum Simulation of Si/SiGe Devices with Experimentally Calibrated Micromagnet Effects
Abstract
Silicon-based spin qubits in Si/SiGe heterostructures are a leading platform for scalable quantum computing, yet bridging the gap between theoretical computer-aided design(CAD) models and experimental reality remains a significant challenge. Standard simulations often fail to capture critical physical phenomena, such as interface dipoles, parasitic charge accumulation, and the magnetic hysteresis of on-chip micromagnets. In this work, we present a comprehensive, experimentally calibrated 3D simulation pipeline for a 6-dot Si/SiGe device. We refine the semiconductor band alignment and introduce a semi-empirical classical charge screening model to accurately capture the formation of parasitic wells and their suppression of gate lever-arms. Furthermore, we apply the Jiles-Atherton model to account for the hysteresis and pre-magnetization of integrated cobalt micromagnets, successfully reproducing the experimental resonant frequencies across all six qubits. By coupling these calibrated electrostatic and magnetic profiles into a time-dependent rotating wave approximation (RWA) Hamiltonian, we reproduce experimental observables, including microwave power chevrons. This framework provides a robust foundation for predicting device behavior, evaluating microwave line losses, and optimizing future scalable spin qubit architectures prior to fabrication.
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BibTeX
@misc{sokolov2026quantum,
title = {{Quantum Simulation of Si/SiGe Devices with Experimentally Calibrated Micromagnet Effects}},
author = {Andrii Sokolov and Conor Power and Mathieu Moras and Claude Rohrbacher and Brian Malone and Sergey Amitonov and Agostino Apra and Amir Sammak and Nodar Samkharadze and Elena Blokhina},
howpublished = {arXiv},
year = {2026},
month = sep,
doi = {10.48550/arxiv.2609.27724},
eprint = {2609.27724},
archivePrefix = {arXiv},
url = {https://arxiv.org/abs/2609.27724},
}
RIS
TY - UNPB
TI - Quantum Simulation of Si/SiGe Devices with Experimentally Calibrated Micromagnet Effects
AU - Andrii Sokolov
AU - Conor Power
AU - Mathieu Moras
AU - Claude Rohrbacher
AU - Brian Malone
AU - Sergey Amitonov
AU - Agostino Apra
AU - Amir Sammak
AU - Nodar Samkharadze
AU - Elena Blokhina
PY - 2026
DA - 2026/09/23
PB - arXiv
DO - 10.48550/arxiv.2609.27724
UR - https://arxiv.org/abs/2609.27724
AB - Silicon-based spin qubits in Si/SiGe heterostructures are a leading platform for scalable quantum computing, yet bridging the gap between theoretical computer-aided design(CAD) models and experimental reality remains a significant challenge. Standard simulations often fail to capture critical physical phenomena, such as interface dipoles, parasitic charge accumulation, and the magnetic hysteresis of on-chip micromagnets. In this work, we present a comprehensive, experimentally calibrated 3D simulation pipeline for a 6-dot Si/SiGe device. We refine the semiconductor band alignment and introduce a semi-empirical classical charge screening model to accurately capture the formation of parasitic wells and their suppression of gate lever-arms. Furthermore, we apply the Jiles-Atherton model to account for the hysteresis and pre-magnetization of integrated cobalt micromagnets, successfully reproducing the experimental resonant frequencies across all six qubits. By coupling these calibrated electrostatic and magnetic profiles into a time-dependent rotating wave approximation (RWA) Hamiltonian, we reproduce experimental observables, including microwave power chevrons. This framework provides a robust foundation for predicting device behavior, evaluating microwave line losses, and optimizing future scalable spin qubit architectures prior to fabrication.
ER -