Family of magnetic field-boosted superconductors in rhombohedral graphene
10 affiliations
- 1Department of Physics, Massachusetts Institute of Technology, Cambridge, MA, USA
- 2Department of Physics, University of Basel, Basel, Switzerland
- 3Department of Physics, Florida State University, Tallahassee, FL, USA
- 4Department of Physics, University of Florida, Gainesville, FL, USA
- 5National High Magnetic Field Laboratory High B/T Facility, University of Florida, Gainesville, FL, USA
- 6Research Center for Electronic and Optical Materials, National Institute for Materials Science, Tsukuba, Japan
- 7Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba, Japan
- 8Department of Nuclear Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA
- 9Department of Physics, University of Basel, Basel, Switzerland. [email protected]
- 10Department of Physics, Massachusetts Institute of Technology, Cambridge, MA, USA. [email protected]
Abstract
In some unconventional superconductors, time-reversal symmetry can be broken apart from the gauge symmetry 1 , resulting in superconductivity that can be enhanced or induced by magnetic fields 2 . However, field-enhanced superconductors are more vulnerable to impurities than their Bardeen–Cooper–Schrieffer counterparts 3 . Crystalline rhombohedral multilayer graphene is a promising platform to explore them because of its superior material quality and gate-tunable strong correlation effects 4,5 . Here we report transport measurements of rhombohedral tetralayer and pentalayer graphene, demonstrating a spectrum of clean-limit superconductivities. We found three different types of field-enhanced and field-induced superconductivities in the pentalayer. They are all robust against an in-plane field up to 8.5 T, exceeding the Pauli limit by tens of times. Compared with Bernal bilayer graphene showing only in-plane field-enhancement 6 , pentalayer graphene features superconductors enhanced by out-of-plane as well as in-plane fields. They also reside at much lower gate electric fields owing to the intrinsically flatter band dispersion—facilitating their study and further engineering. Moreover, we observed that proximitized spin–orbit coupling generates multiple new superconductors without introducing additional disorder effects. Our work establishes a new family of magnetic field-boosted superconductors in rhombohedral graphene. Using the high accessibility with moderate gate voltages, this will pave the way for realizing non-Abelian quasiparticles through interfacial engineering 7 in the extreme clean limit, in that proximitized spin–orbit coupling leads to topological states 8 and maintains the ultrahigh quality of crystalline graphene.
Related
- Chiral superconductors and competing states across a Lifshitz transition in rhombohedral pentalayer graphene
- Spin-polarized Superconductivity and High-Chern Insulators in Twisted Rhombohedral Graphene Family
- Layer-selective and magnetic-field-enhanced transport of topological kink states in rhombohedral multilayer graphene
- Multicomponent Magnetic Domain Walls in Rhombohedral Graphene
- Finite-Momentum Pairing and Superlattice Superconductivity in Valley-Imbalanced Rhombohedral Graphene
BibTeX
@article{seo2026family,
title = {{Family of magnetic field-boosted superconductors in rhombohedral graphene}},
author = {Junseok Seo and Armel A. Cotten and Shenyong Ye and Mingchi Xu and Omid Sharifi Sedeh and Henok Weldeyesus and Tonghang Han and Zhengguang Lu and Zhenghan Wu and Wei Xü and Jixiang Yang and Emily Aitken and Prayoga P. Liong and Phatthanon Pattanakanvijit and Zach Hadjri and R. R. Gazizulin and Kenji Watanabe and Takashi Taniguchi and Mingda Li and Dominik M. Zumbühl and Long Ju},
journal = {Nature},
year = {2026},
month = jun,
doi = {10.1038/s41586-026-10815-x},
url = {https://doi.org/10.1038/s41586-026-10815-x},
note = {CC BY},
}
RIS
TY - JOUR
TI - Family of magnetic field-boosted superconductors in rhombohedral graphene
AU - Junseok Seo
AU - Armel A. Cotten
AU - Shenyong Ye
AU - Mingchi Xu
AU - Omid Sharifi Sedeh
AU - Henok Weldeyesus
AU - Tonghang Han
AU - Zhengguang Lu
AU - Zhenghan Wu
AU - Wei Xü
AU - Jixiang Yang
AU - Emily Aitken
AU - Prayoga P. Liong
AU - Phatthanon Pattanakanvijit
AU - Zach Hadjri
AU - R. R. Gazizulin
AU - Kenji Watanabe
AU - Takashi Taniguchi
AU - Mingda Li
AU - Dominik M. Zumbühl
AU - Long Ju
PY - 2026
DA - 2026/06/29
JO - Nature
DO - 10.1038/s41586-026-10815-x
UR - https://doi.org/10.1038/s41586-026-10815-x
AB - In some unconventional superconductors, time-reversal symmetry can be broken apart from the gauge symmetry 1 , resulting in superconductivity that can be enhanced or induced by magnetic fields 2 . However, field-enhanced superconductors are more vulnerable to impurities than their Bardeen–Cooper–Schrieffer counterparts 3 . Crystalline rhombohedral multilayer graphene is a promising platform to explore them because of its superior material quality and gate-tunable strong correlation effects 4,5 . Here we report transport measurements of rhombohedral tetralayer and pentalayer graphene, demonstrating a spectrum of clean-limit superconductivities. We found three different types of field-enhanced and field-induced superconductivities in the pentalayer. They are all robust against an in-plane field up to 8.5 T, exceeding the Pauli limit by tens of times. Compared with Bernal bilayer graphene showing only in-plane field-enhancement 6 , pentalayer graphene features superconductors enhanced by out-of-plane as well as in-plane fields. They also reside at much lower gate electric fields owing to the intrinsically flatter band dispersion—facilitating their study and further engineering. Moreover, we observed that proximitized spin–orbit coupling generates multiple new superconductors without introducing additional disorder effects. Our work establishes a new family of magnetic field-boosted superconductors in rhombohedral graphene. Using the high accessibility with moderate gate voltages, this will pave the way for realizing non-Abelian quasiparticles through interfacial engineering 7 in the extreme clean limit, in that proximitized spin–orbit coupling leads to topological states 8 and maintains the ultrahigh quality of crystalline graphene.
SN - 0028-0836
SN - 1476-4687
ER -