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Peer-reviewedCC BYDiamond and Related Materials

The effect of nitrogen implantation on resistive switching of tetrahedral amorphous carbon films

  • V.K. Nagareddy
  • A.K. Ott
  • C. Dou
  • T. Tsvetkova
  • M. Sandulov
  • M.F. Craciun
  • A.C. Ferrari
  • C.D. Wright
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Abstract

We report the effect of nitrogen implantation on the resistance switching of tetrahedral amorphous carbon (ta-C) films. Both unimplanted and implanted films show resistive switching, with a characteristic threshold voltage required to switch the films from the high-resistance to the low-resistance state. The switching voltages for the unimplanted films are between 7 and 10 V for ta-C films of thickness 15 to 40 nm. These are significantly reduced upon implantation by up to 60% when using an implantation dose ~3 × 1015 cm−2. We attribute this to increased sp2 bonding and clustering in the implanted films. This demonstrates the importance of sp2 clustering for resistive-switching in sp3-rich ta-C films.

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Cite

BibTeXRIS
BibTeX
@article{nagareddy2026effect,
  title = {{The effect of nitrogen implantation on resistive switching of tetrahedral amorphous carbon films}},
  author = {V.K. Nagareddy and A.K. Ott and C. Dou and T. Tsvetkova and M. Sandulov and M.F. Craciun and A.C. Ferrari and C.D. Wright},
  journal = {Diamond and Related Materials},
  year = {2026},
  month = sep,
  doi = {10.1016/j.diamond.2018.05.005},
  url = {https://hal.science/hal-04650124v1},
  note = {CC BY},
}
RIS
TY  - JOUR
TI  - The effect of nitrogen implantation on resistive switching of tetrahedral amorphous carbon films
AU  - V.K. Nagareddy
AU  - A.K. Ott
AU  - C. Dou
AU  - T. Tsvetkova
AU  - M. Sandulov
AU  - M.F. Craciun
AU  - A.C. Ferrari
AU  - C.D. Wright
PY  - 2026
DA  - 2026/09/01
JO  - Diamond and Related Materials
DO  - 10.1016/j.diamond.2018.05.005
UR  - https://hal.science/hal-04650124v1
AB  - We report the effect of nitrogen implantation on the resistance switching of tetrahedral amorphous carbon (ta-C) films. Both unimplanted and implanted films show resistive switching, with a characteristic threshold voltage required to switch the films from the high-resistance to the low-resistance state. The switching voltages for the unimplanted films are between 7 and 10 V for ta-C films of thickness 15 to 40 nm. These are significantly reduced upon implantation by up to 60% when using an implantation dose ~3 × 1015 cm−2. We attribute this to increased sp2 bonding and clustering in the implanted films. This demonstrates the importance of sp2 clustering for resistive-switching in sp3-rich ta-C films.
SN  - 0925-9635
ER  -