Current-voltage characteristics and resistive switching in epitaxial La0.67Sr0.33MnO3/SrMnO3/La0.67Sr0.33MnO3 multilayer
Abstract
In present study, we investigate the structural properties and current-voltage (I-V) characteristics of an epitaxial multilayer composed of La0.67Sr0.33MnO3 (25 nm)/SrMnO3 (70 nm)/La0.67Sr0.33MnO3 (25 nm), grown on different substrates i.e., SrTiO3(100), LaAlO3(100), Si (100). The used substrates not only have different chemical compositions in line with the film materials, also they have different lattice parameters which would tune the material chemistry and lattice strain at the interface significantly. Our I-V measurements reveal distinct electrical behaviors depending on the substrate. The multilayers grown on oxide SrTiO3(100) and LaAlO3(100) substrates exhibit regular I-V with slight nonlinearity at low applied voltages. In contrast, I-V in multilayer with Si(100) substrate exhibits large asymmetry and notable resistive switching (RS) behavior at room temperature, where a resistance ratio around 10 between the high resistance state (HRS) and low resistance state (LRS) is observed. While the observed I-V behavior is sensitive to substrate-induced interfacial disorder and formation of trap bands within bandgap of SrMnO3, the present results have potential applications in future memory and memristive devices.
Versions
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BibTeX
@misc{rahman2026currentvoltage,
title = {{Current-voltage characteristics and resistive switching in epitaxial La$_0.67$Sr$_0.33$MnO$_3$/SrMnO$_3$/La$_0.67$Sr$_0.33$MnO$_3$ multilayer}},
author = {A. G. A. Rahman and R. K. Patel and Chandrani Nath and A. K. Pramanik},
howpublished = {arXiv},
year = {2026},
month = sep,
doi = {10.48550/arxiv.2609.31175},
eprint = {2609.31175},
archivePrefix = {arXiv},
url = {https://arxiv.org/abs/2609.31175},
note = {CC BY 4.0},
}
RIS
TY - UNPB
TI - Current-voltage characteristics and resistive switching in epitaxial La_0.67Sr_0.33MnO_3/SrMnO_3/La_0.67Sr_0.33MnO_3 multilayer
AU - A. G. A. Rahman
AU - R. K. Patel
AU - Chandrani Nath
AU - A. K. Pramanik
PY - 2026
DA - 2026/09/25
PB - arXiv
DO - 10.48550/arxiv.2609.31175
UR - https://arxiv.org/abs/2609.31175
AB - In present study, we investigate the structural properties and current-voltage (I-V) characteristics of an epitaxial multilayer composed of La_0.67Sr_0.33MnO_3 (25 nm)/SrMnO_3 (70 nm)/La_0.67Sr_0.33MnO_3 (25 nm), grown on different substrates i.e., SrTiO_3(100), LaAlO_3(100), Si (100). The used substrates not only have different chemical compositions in line with the film materials, also they have different lattice parameters which would tune the material chemistry and lattice strain at the interface significantly. Our I-V measurements reveal distinct electrical behaviors depending on the substrate. The multilayers grown on oxide SrTiO_3(100) and LaAlO_3(100) substrates exhibit regular I-V with slight nonlinearity at low applied voltages. In contrast, I-V in multilayer with Si(100) substrate exhibits large asymmetry and notable resistive switching (RS) behavior at room temperature, where a resistance ratio around 10 between the high resistance state (HRS) and low resistance state (LRS) is observed. While the observed I-V behavior is sensitive to substrate-induced interfacial disorder and formation of trap bands within bandgap of SrMnO_3, the present results have potential applications in future memory and memristive devices.
ER -