Cryogenic wafer probing below one Kelvin: Characterization of normal-metal Coulomb blockade thermometers at wafer scale
Abstract
Coulomb blockade thermometers (CBTs) have attracted more interest in recent years, as the demand for sub-one Kelvin thermometry has increased, especially due to the prevalence of dilution refrigerators in research and applications in quantum technology. CBTs can be operated both as a primary thermometer, requiring no prior calibration, or as a simple resistance thermometer in the secondary mode after calibration. As new scalable fabrication processes for quantum devices and cryogenic electronics are being developed, cryogenic wafer characterization methods must also scale up to provide statistical data on device parameters. Currently, characterization throughput of cryogenic devices is limited by the turnover time and sample capacity of traditional cryostats, where a measurement cycle for only a few devices can take several days. In this work, we demonstrate wafer-scale cryogenic characterization of a recently developed TiW/Al-AlOx/TiW normal-metal tunnel junction technology using CBTs. Measurements performed in a 300 mm cryogenic wafer prober (CWP) show on-chip electron temperatures below 700 mK across a full 150 mm wafer, as determined by primary thermometry. These results establish wafer-level testing below 1 K as a viable approach for large-scale cryogenic characterization of electrical devices, opening a pathway toward high-throughput screening of quantum devices and direct wafer-scale characterization of aluminum-based superconducting circuits.
Related
- Coulomb Blockade in a One-Dimensional Array of Strong Josephson Junctions
- Cryogenic Optoelectronic Characterization of InGaAsP LEDs for Low-Energy Detector Calibration
- Characterization of Next Generation Power Over Fiber Systems under Cryogenic Conditions for Advanced Physics Instrumentation
- Adaptive Self-Optimization of Polarization Efficiency for Low-Power NV Center Thermometers Based on PAS-Q
- Precise measurement of the thermal quenching factor of alpha particles in Li2MoO4 cryogenic calorimeters
BibTeX
@misc{lehtisyrja2026cryogenic,
title = {{Cryogenic wafer probing below one Kelvin: Characterization of normal-metal Coulomb blockade thermometers at wafer scale}},
author = {Lassi Lehtisyrjä and Renan P. Loreto and Juho Luomahaara and Jarno Järvinen and Tuure Rantanen and Juha Vikstedt and Janne S. Lehtinen and Matti Remes and Timo Salminen and Juuso Helander and Aki Junes and Pasi Aaltonen and Vesa Henttonen and Mika Prunnila},
howpublished = {arXiv},
year = {2026},
month = sep,
doi = {10.48550/arxiv.2609.12596},
eprint = {2609.12596},
archivePrefix = {arXiv},
url = {https://arxiv.org/abs/2609.12596},
note = {CC BY-NC-SA 4.0},
}
RIS
TY - UNPB
TI - Cryogenic wafer probing below one Kelvin: Characterization of normal-metal Coulomb blockade thermometers at wafer scale
AU - Lassi Lehtisyrjä
AU - Renan P. Loreto
AU - Juho Luomahaara
AU - Jarno Järvinen
AU - Tuure Rantanen
AU - Juha Vikstedt
AU - Janne S. Lehtinen
AU - Matti Remes
AU - Timo Salminen
AU - Juuso Helander
AU - Aki Junes
AU - Pasi Aaltonen
AU - Vesa Henttonen
AU - Mika Prunnila
PY - 2026
DA - 2026/09/11
PB - arXiv
DO - 10.48550/arxiv.2609.12596
UR - https://arxiv.org/abs/2609.12596
AB - Coulomb blockade thermometers (CBTs) have attracted more interest in recent years, as the demand for sub-one Kelvin thermometry has increased, especially due to the prevalence of dilution refrigerators in research and applications in quantum technology. CBTs can be operated both as a primary thermometer, requiring no prior calibration, or as a simple resistance thermometer in the secondary mode after calibration. As new scalable fabrication processes for quantum devices and cryogenic electronics are being developed, cryogenic wafer characterization methods must also scale up to provide statistical data on device parameters. Currently, characterization throughput of cryogenic devices is limited by the turnover time and sample capacity of traditional cryostats, where a measurement cycle for only a few devices can take several days. In this work, we demonstrate wafer-scale cryogenic characterization of a recently developed TiW/Al-AlOx/TiW normal-metal tunnel junction technology using CBTs. Measurements performed in a 300 mm cryogenic wafer prober (CWP) show on-chip electron temperatures below 700 mK across a full 150 mm wafer, as determined by primary thermometry. These results establish wafer-level testing below 1 K as a viable approach for large-scale cryogenic characterization of electrical devices, opening a pathway toward high-throughput screening of quantum devices and direct wafer-scale characterization of aluminum-based superconducting circuits.
ER -