Cryogenic Optoelectronic Characterization of InGaAsP LEDs for Low-Energy Detector Calibration
Abstract
We measured the emission spectra and current-voltage (IV) characteristics of commercial InGaAsP LEDs in a cryostat over a temperature range from 7 K to 300 K. At a constant operating current of 3.3 mA, the peak emission wavelength of the 1200 nm (1650 nm) LED decreased from 1202.3 +/- 0.5 nm (1665.5 +/- 0.6 nm) at 300 K to 1143.1 +/- 0.3 nm (1539.5 +/- 2.2 nm) at 7 K, demonstrating a strong temperature dependence. The cut-in voltage increased systematically with decreasing temperature, in agreement with conventional diode theory. To assess junction self-heating effects, we conducted pulsed IV measurements at different duty cycles. The extracted apparent series resistance showed a clear duty-cycle dependence, whereas the cut-in voltage remained unchanged within experimental uncertainty, indicating that self-heating primarily influenced the IV slope rather than the cut-in voltage. These results quantitatively characterize the thermal behavior of both the spectral peak and key electrical parameters, supporting the application of InGaAsP LEDs as cryogenic calibration light sources.
Related
- Demonstration of a cryogenic, switchable electron source for low-temperature detector calibration
- Design, Modeling, and Characterization of High-Performance 1550-nm InGaAsP/InP Spot-Size Converter Integrated Waveguide Photodiode
- Photon Calibration Techniques for High Resolution Cryogenic Detectors
- Impact of the position effects in the energy calibration of the BULLKID detector
- Detectability-Aware Screening of Post-Merger Gravitational-Wave Damping Anomalies in Real Detector Noise: A Graph-Spectral Approach with Empirical Null Calibration
BibTeX
@misc{ghaith2026cryogenic,
title = {{Cryogenic Optoelectronic Characterization of InGaAsP LEDs for Low-Energy Detector Calibration}},
author = {Muad Ghaith and Wolfgang Rau and Philippe Di Stefano and Matthew Peterson-Galema and Eleanor Fascione and Richard Germond and Ryan Underwood},
howpublished = {arXiv},
year = {2026},
month = nov,
doi = {10.48550/arxiv.2611.01776},
eprint = {2611.01776},
archivePrefix = {arXiv},
url = {https://arxiv.org/abs/2611.01776},
}
RIS
TY - UNPB
TI - Cryogenic Optoelectronic Characterization of InGaAsP LEDs for Low-Energy Detector Calibration
AU - Muad Ghaith
AU - Wolfgang Rau
AU - Philippe Di Stefano
AU - Matthew Peterson-Galema
AU - Eleanor Fascione
AU - Richard Germond
AU - Ryan Underwood
PY - 2026
DA - 2026/11/01
PB - arXiv
DO - 10.48550/arxiv.2611.01776
UR - https://arxiv.org/abs/2611.01776
AB - We measured the emission spectra and current-voltage (IV) characteristics of commercial InGaAsP LEDs in a cryostat over a temperature range from 7 K to 300 K. At a constant operating current of 3.3 mA, the peak emission wavelength of the 1200 nm (1650 nm) LED decreased from 1202.3 +/- 0.5 nm (1665.5 +/- 0.6 nm) at 300 K to 1143.1 +/- 0.3 nm (1539.5 +/- 2.2 nm) at 7 K, demonstrating a strong temperature dependence. The cut-in voltage increased systematically with decreasing temperature, in agreement with conventional diode theory. To assess junction self-heating effects, we conducted pulsed IV measurements at different duty cycles. The extracted apparent series resistance showed a clear duty-cycle dependence, whereas the cut-in voltage remained unchanged within experimental uncertainty, indicating that self-heating primarily influenced the IV slope rather than the cut-in voltage. These results quantitatively characterize the thermal behavior of both the spectral peak and key electrical parameters, supporting the application of InGaAsP LEDs as cryogenic calibration light sources.
ER -