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Peer-reviewedCC BYNanomaterials (Basel, Switzerland)

Multiwavelength Optical Pulse-Induced Temporal State Mapping in an ITO/SnO2/ITO Optoelectronic Synaptic Device

  1. 1State Key Laboratory of Integrated Optoelectronics, Key Laboratory of UV Light-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, Changchun 130024, China
  2. 2Laboratory of Neuromorphic Memristor Computing, College of Physical Science and Technology, Bohai University, Jinzhou 121000, China

Abstract

A vertical ITO/SnO2/ITO optoelectronic synaptic device was fabricated by magnetron sputtering for optical sensing and temporal-state encoding. The ITO/SnO2 stack exhibited 88.3% average transmittance over 400–800 nm. The device responded to 380, 550 and 660 nm illumination and showed paired-pulse facilitation (PPF) together with pulse-width, interval and number-dependent modulation, evidencing finite-timescale history dependence and pulse-dependent accumulation. These dynamics are consistent with rapid photocarrier excitation followed by slower localized-state trapping, detrapping, redistribution and relaxation, detrapping, redistribution and relaxation. All 16 possible 4-bit optical sequences were experimentally applied and identical pulse numbers arranged at different temporal positions produced different final current states. The measured state library was used for visual feature construction: a simple multilayer perceptron achieved 96.06 ± 0.19% test accuracy for MNIST over five independent runs, while a hybrid representation achieved 98.26 ± 0.28% over five independent runs for four-frame trajectory recognition; ablation showed that device-state features preserved temporal-order information. These results support temporal-order-sensitive physical encoding in a simple transparent oxide device.

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BibTeX
@article{zhuang2026multiwavelength,
  title = {{Multiwavelength Optical Pulse-Induced Temporal State Mapping in an ITO/SnO2/ITO Optoelectronic Synaptic Device}},
  author = {Senyu Zhuang and Zhuang Hou and Shuqi Teng and Yingqi Zhao and Yongqi Song and Xuanyu Shan and Meng Qi and Mingan Luan and Ye Tao},
  journal = {Nanomaterials (Basel, Switzerland)},
  year = {2026},
  month = oct,
  doi = {10.3390/nano16191268},
  url = {https://europepmc.org/article/PMC/PMC13667160},
  note = {CC BY},
}
RIS
TY  - JOUR
TI  - Multiwavelength Optical Pulse-Induced Temporal State Mapping in an ITO/SnO2/ITO Optoelectronic Synaptic Device
AU  - Senyu Zhuang
AU  - Zhuang Hou
AU  - Shuqi Teng
AU  - Yingqi Zhao
AU  - Yongqi Song
AU  - Xuanyu Shan
AU  - Meng Qi
AU  - Mingan Luan
AU  - Ye Tao
PY  - 2026
DA  - 2026/10/01
JO  - Nanomaterials (Basel, Switzerland)
DO  - 10.3390/nano16191268
UR  - https://europepmc.org/article/PMC/PMC13667160
AB  - A vertical ITO/SnO2/ITO optoelectronic synaptic device was fabricated by magnetron sputtering for optical sensing and temporal-state encoding. The ITO/SnO2 stack exhibited 88.3% average transmittance over 400–800 nm. The device responded to 380, 550 and 660 nm illumination and showed paired-pulse facilitation (PPF) together with pulse-width, interval and number-dependent modulation, evidencing finite-timescale history dependence and pulse-dependent accumulation. These dynamics are consistent with rapid photocarrier excitation followed by slower localized-state trapping, detrapping, redistribution and relaxation, detrapping, redistribution and relaxation. All 16 possible 4-bit optical sequences were experimentally applied and identical pulse numbers arranged at different temporal positions produced different final current states. The measured state library was used for visual feature construction: a simple multilayer perceptron achieved 96.06 ± 0.19% test accuracy for MNIST over five independent runs, while a hybrid representation achieved 98.26 ± 0.28% over five independent runs for four-frame trajectory recognition; ablation showed that device-state features preserved temporal-order information. These results support temporal-order-sensitive physical encoding in a simple transparent oxide device.
SN  - 2079-4991
ER  -