Effect of lithium diffusion into Ga2O3 thin films

Abstract

The design of Ga2O3 based pn-heterojunctions is recently considering the employment of lithium-based compounds (e.g., Li:NiO/Ga2O3, LiGa5O8/Ga2O3). It is therefore fundamental to understand the potential stability of such interfaces especially considering the possible diffusion and related effects of Li on the Ga2O3 functional properties. In this work the ex-situ diffusion of Li is investigated in three different Ga2O3 epilayers systems [(001) κ-Ga2O3 and (-201) β-Ga2O3 heteroepitaxy on (001) α-Al2O3 and (010) β-Ga2O3 homoepitaxy] at relevant temperatures for the synthesis / processing temperatures of Li-based epilayers. It is here experimentally demonstrated and quantified the Li diffusion in all the investigated Ga2O3 epilayers systems and Li bulk (DLi,bulk) and 2D defects (DLi,2D) diffusion coefficients are provided. In the case of the (010) β-Ga2O3 homoepitaxial layer (nominally free of structural defects), hybrid functional theory calculations foresee a VGa mediated diffusion. Moreover, in the (010) β-Ga2O3 homo-layer a significant effect on its functional properties upon the Li-diffusion process is experimentally highlighted and tentatively related to the passivation of acceptor defects (i.e., formation of VGa-nLi complexes).

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BibTeX RIS

BibTeX

@article{sacchi2026effect,
  title = {{Effect of lithium diffusion into Ga2O3 thin films}},
  author = {A. Sacchi and M. Sidoli and A. Ardenghi and O. Bierwagen and J. Kler and A. Falkenstein and R.A. de Souza and M. Martin and D. Spallek and J. Lähnemann and H. Tornatzky and M.R. Wagner and A. Parisini and M. Pavesi and M. Bosi and L. Seravalli and J.B. Varley and G. Spaggiari and D. Bersani and K. Mizohata and F. Tuomisto and G. Magnani and D. Pontiroli and M. Riccò and F. Mezzadri and S. Pasini and A. Bosio and R. Fornari and P. Mazzolini},
  journal = {Applied Surface Science},
  year = {2026},
  month = oct,
  doi = {10.1016/j.apsusc.2025.163974},
  url = {https://hal.science/hal-05795972v1},
  note = {CC BY},
}

RIS

TY  - JOUR
TI  - Effect of lithium diffusion into Ga2O3 thin films
AU  - A. Sacchi
AU  - M. Sidoli
AU  - A. Ardenghi
AU  - O. Bierwagen
AU  - J. Kler
AU  - A. Falkenstein
AU  - R.A. de Souza
AU  - M. Martin
AU  - D. Spallek
AU  - J. Lähnemann
AU  - H. Tornatzky
AU  - M.R. Wagner
AU  - A. Parisini
AU  - M. Pavesi
AU  - M. Bosi
AU  - L. Seravalli
AU  - J.B. Varley
AU  - G. Spaggiari
AU  - D. Bersani
AU  - K. Mizohata
AU  - F. Tuomisto
AU  - G. Magnani
AU  - D. Pontiroli
AU  - M. Riccò
AU  - F. Mezzadri
AU  - S. Pasini
AU  - A. Bosio
AU  - R. Fornari
AU  - P. Mazzolini
PY  - 2026
DA  - 2026/10/12
JO  - Applied Surface Science
DO  - 10.1016/j.apsusc.2025.163974
UR  - https://hal.science/hal-05795972v1
AB  - The design of Ga2O3 based pn-heterojunctions is recently considering the employment of lithium-based compounds (e.g., Li:NiO/Ga2O3, LiGa5O8/Ga2O3). It is therefore fundamental to understand the potential stability of such interfaces especially considering the possible diffusion and related effects of Li on the Ga2O3 functional properties. In this work the ex-situ diffusion of Li is investigated in three different Ga2O3 epilayers systems [(001) κ-Ga2O3 and (-201) β-Ga2O3 heteroepitaxy on (001) α-Al2O3 and (010) β-Ga2O3 homoepitaxy] at relevant temperatures for the synthesis / processing temperatures of Li-based epilayers. It is here experimentally demonstrated and quantified the Li diffusion in all the investigated Ga2O3 epilayers systems and Li bulk (DLi,bulk) and 2D defects (DLi,2D) diffusion coefficients are provided. In the case of the (010) β-Ga2O3 homoepitaxial layer (nominally free of structural defects), hybrid functional theory calculations foresee a VGa mediated diffusion. Moreover, in the (010) β-Ga2O3 homo-layer a significant effect on its functional properties upon the Li-diffusion process is experimentally highlighted and tentatively related to the passivation of acceptor defects (i.e., formation of VGa-nLi complexes).
SN  - 0169-4332
SN  - 1873-5584
ER  -

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