Highly Efficient Exciton Modulation in MoSe2/PdSe2 Heterostructures.
9 affiliations
- 1Department of Molecular Sciences and Nanosystems, Ca' Foscari University of Venice, 30172Venice, Italy.
- 2Institute of Condensed Matter Theory and Optics, Friedrich Schiller University Jena, 07743Jena, Germany.
- 3Department of Materials Science and Engineering, University of Crete, 70013Heraklion, Crete, Greece.
- 4Institute of Electronic Structure and Laser, Foundation for Research and Technology─Hellas, 70013Heraklion, Crete, Greece.
- 5Institute of Solid State Physics, Friedrich Schiller University Jena, 07743Jena, Germany.
- 6Department of Physics, Politecnico di Milano, I-20133Milano, Italy.
- 7Department of Inorganic Chemistry, University of Chemistry and Technology Prague, 166 28Prague 6, Czech Republic.
- 8Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba305-0044, Japan.
- 9Research Center for Electronic and Optical Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba305-0044, Japan.
Abstract
We report a pronounced ∼6-fold enhancement of room-temperature A-exciton emission in a type-I MoSe2/PdSe2 van der Waals heterostructure, yielding a photoluminescence quantum yield of 6%, as compared to ∼1% for as-exfoliated monolayer MoSe2. This unusual enhancement is accompanied by strong quenching of the B exciton, consistent with interlayer electronic coupling that redistributes exciton populations toward the radiative A-exciton channel. Power- and temperature-dependent measurements reveal a suppression of exciton-exciton annihilation and a crossover to quenched emission at a low temperature, indicating a redistribution of exciton relaxation pathways. Photoluminescence excitation spectroscopy further reveals a broadband enhancement spanning 450-725 nm. These results demonstrate that interlayer electronic coupling can be used as an efficient means to redirect exciton populations toward radiative channels, enhancing emission efficiency in two-dimensional semiconductors without chemical modification or significant strain.
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BibTeX
@article{rozhin2026highly,
title = {{Highly Efficient Exciton Modulation in MoSe2/PdSe2 Heterostructures.}},
author = {Petr Rozhin and Muhammad Sufyan Ramzan and Emma Contin and Danae Katrisioti and Till Weickhardt and Micol Bertolotti and Nouha Loudhaief and Bing Wu and Zdeněk Sofer and Takashi Taniguchi and Kenji Watanabe and Leonardo Puppulin and Caterina Cocchi and Ioannis Paradisanos and Giancarlo Soavi and Stefano Dal Conte and Giovanni Antonio Salvatore and Domenico De Fazio},
journal = {Nano letters},
year = {2026},
month = oct,
doi = {10.1021/acs.nanolett.6c02581},
url = {https://europepmc.org/article/MED/42917377},
note = {CC BY},
}
RIS
TY - JOUR
TI - Highly Efficient Exciton Modulation in MoSe2/PdSe2 Heterostructures.
AU - Petr Rozhin
AU - Muhammad Sufyan Ramzan
AU - Emma Contin
AU - Danae Katrisioti
AU - Till Weickhardt
AU - Micol Bertolotti
AU - Nouha Loudhaief
AU - Bing Wu
AU - Zdeněk Sofer
AU - Takashi Taniguchi
AU - Kenji Watanabe
AU - Leonardo Puppulin
AU - Caterina Cocchi
AU - Ioannis Paradisanos
AU - Giancarlo Soavi
AU - Stefano Dal Conte
AU - Giovanni Antonio Salvatore
AU - Domenico De Fazio
PY - 2026
DA - 2026/10/01
JO - Nano letters
DO - 10.1021/acs.nanolett.6c02581
UR - https://europepmc.org/article/MED/42917377
AB - We report a pronounced ∼6-fold enhancement of room-temperature A-exciton emission in a type-I MoSe2/PdSe2 van der Waals heterostructure, yielding a photoluminescence quantum yield of 6%, as compared to ∼1% for as-exfoliated monolayer MoSe2. This unusual enhancement is accompanied by strong quenching of the B exciton, consistent with interlayer electronic coupling that redistributes exciton populations toward the radiative A-exciton channel. Power- and temperature-dependent measurements reveal a suppression of exciton-exciton annihilation and a crossover to quenched emission at a low temperature, indicating a redistribution of exciton relaxation pathways. Photoluminescence excitation spectroscopy further reveals a broadband enhancement spanning 450-725 nm. These results demonstrate that interlayer electronic coupling can be used as an efficient means to redirect exciton populations toward radiative channels, enhancing emission efficiency in two-dimensional semiconductors without chemical modification or significant strain.
SN - 1530-6984
SN - 1530-6992
ER -