Berry curvature contribution towards 1s − 2p± interlayer exciton ultrafast transition within a R-WSe2/MoSe2 heterobilayer
Abstract
We calculate the spectrum of interlayer neutral excitons in transition-metal-dichalcogenide WSe2/MoSe2 heterobilayers in R-stacking configuration. Most saliently, we show that, similar to neutral excitons and trions in monolayer transition-metal dichalcogenides, the spectrum is sensitive to the Berry curvature and thus quantum-geometric effects underlying the electron and hole wave functions. Due to the spatial separation between the electron and hole constituting the exciton in different layers, the Berry-curvature-induced splitting between the 2p+ and the 2p− exciton states is smaller than for monolayer excitons. Furthermore, we investigate the dependence of the exciton spectra on the dielectric environment and the twist angle between the two layers. Finally, the long-lived moiré interlayer exciton ground state (1s) enhances the possibility of creating brightened 2p± states using a circularly polarized medium-infrared probe from the 1s ground state. As a result, we determine the polarizability of the 1s–2p± transition, with the help of a two-level dressed model for the optical Stark effect.
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BibTeX
@article{hannachi2026berry,
title = {{Berry curvature contribution towards 1s − 2p± interlayer exciton ultrafast transition within a R-WSe2/MoSe2 heterobilayer}},
author = {H.E. Hannachi and M.O. Goerbig and S. Jaziri},
journal = {Journal of Applied Physics},
year = {2026},
month = nov,
doi = {10.1063/5.0279856},
eprint = {2408.04136},
archivePrefix = {arXiv},
url = {https://hal.science/hal-05853603v1},
note = {CC BY},
}
RIS
TY - JOUR
TI - Berry curvature contribution towards 1s − 2p± interlayer exciton ultrafast transition within a R-WSe2/MoSe2 heterobilayer
AU - H.E. Hannachi
AU - M.O. Goerbig
AU - S. Jaziri
PY - 2026
DA - 2026/11/05
JO - Journal of Applied Physics
DO - 10.1063/5.0279856
UR - https://hal.science/hal-05853603v1
AB - We calculate the spectrum of interlayer neutral excitons in transition-metal-dichalcogenide WSe2/MoSe2 heterobilayers in R-stacking configuration. Most saliently, we show that, similar to neutral excitons and trions in monolayer transition-metal dichalcogenides, the spectrum is sensitive to the Berry curvature and thus quantum-geometric effects underlying the electron and hole wave functions. Due to the spatial separation between the electron and hole constituting the exciton in different layers, the Berry-curvature-induced splitting between the 2p+ and the 2p− exciton states is smaller than for monolayer excitons. Furthermore, we investigate the dependence of the exciton spectra on the dielectric environment and the twist angle between the two layers. Finally, the long-lived moiré interlayer exciton ground state (1s) enhances the possibility of creating brightened 2p± states using a circularly polarized medium-infrared probe from the 1s ground state. As a result, we determine the polarizability of the 1s–2p± transition, with the help of a two-level dressed model for the optical Stark effect.
SN - 0021-8979
SN - 1089-7550
ER -