The RD50-MPW4: A Radiation Hard HV CMOS Sensor for Future Colliders
Abstract
The former CERN RD50 collaboration develops monolithic active pixel high voltage (HV) CMOS sensors for future colliders with the aim of high radiation tolerance, good time resolution, and high granularity pixel detectors. The most recent prototype, the RD50-MPW4, was produced by LFoundry in December 2023 using a 150 nm CMOS process. It features a matrix of 64x64 pixels with a 62 μm pitch and employs a column-drain readout architecture. Compared to its predecessor, it now has separate analog and digital power domains and a new biasing scheme with a guard ring structure that supports bias voltages over 600 V. This contribution will discuss the design and latest results of the MPW4, where tests with unirradiated samples showed more than 99.9% efficiency, 16 μm spatial resolution and 10 ns timing resolution. Efficiencies of over 99% were achieved for samples irradiated to fluences of 1 × 1015 1 MeV neq/cm2. A 3D map of the charge collection efficiency from a measurement with two-photon absorption laser is presented that nicely outlines the depletion depth of this radiation hard, high granularity monolithic active pixel sensor.
Versions
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BibTeX
@misc{sonneveld2026rd50mpw4,
title = {{The RD50-MPW4: A Radiation Hard HV CMOS Sensor for Future Colliders}},
author = {Jory Sonneveld and Thomas Bergauer and Raimon Casanova and Harald Handerkas and Christian Irmler and Jorge Jiménez-Sánchez and Uwe Krämer and Ricardo Marco-Hernandez and José Mazorra de Cose and Fernando Muñoz-Chavero and Rogelio Palomo and Bernhard Pilsl and Sebastian Portschy and Samuel Powell and Patrick Sieberer and Helmut Steininger and Eva Vilella and Benjamin Wade and Chenfan Zhang and Sinuo Zhang},
howpublished = {arXiv},
year = {2026},
month = jul,
doi = {10.48550/arxiv.2607.18456},
eprint = {2607.18456},
archivePrefix = {arXiv},
url = {https://arxiv.org/abs/2607.18456},
note = {CC BY 4.0},
}
RIS
TY - UNPB
TI - The RD50-MPW4: A Radiation Hard HV CMOS Sensor for Future Colliders
AU - Jory Sonneveld
AU - Thomas Bergauer
AU - Raimon Casanova
AU - Harald Handerkas
AU - Christian Irmler
AU - Jorge Jiménez-Sánchez
AU - Uwe Krämer
AU - Ricardo Marco-Hernandez
AU - José Mazorra de Cose
AU - Fernando Muñoz-Chavero
AU - Rogelio Palomo
AU - Bernhard Pilsl
AU - Sebastian Portschy
AU - Samuel Powell
AU - Patrick Sieberer
AU - Helmut Steininger
AU - Eva Vilella
AU - Benjamin Wade
AU - Chenfan Zhang
AU - Sinuo Zhang
PY - 2026
DA - 2026/07/20
PB - arXiv
DO - 10.48550/arxiv.2607.18456
UR - https://arxiv.org/abs/2607.18456
AB - The former CERN RD50 collaboration develops monolithic active pixel high voltage (HV) CMOS sensors for future colliders with the aim of high radiation tolerance, good time resolution, and high granularity pixel detectors. The most recent prototype, the RD50-MPW4, was produced by LFoundry in December 2023 using a 150 nm CMOS process. It features a matrix of 64x64 pixels with a 62 μm pitch and employs a column-drain readout architecture. Compared to its predecessor, it now has separate analog and digital power domains and a new biasing scheme with a guard ring structure that supports bias voltages over 600 V. This contribution will discuss the design and latest results of the MPW4, where tests with unirradiated samples showed more than 99.9% efficiency, 16 μm spatial resolution and 10 ns timing resolution. Efficiencies of over 99% were achieved for samples irradiated to fluences of 1 × 10^15 1 MeV n_eq/cm^2. A 3D map of the charge collection efficiency from a measurement with two-photon absorption laser is presented that nicely outlines the depletion depth of this radiation hard, high granularity monolithic active pixel sensor.
ER -