Laser-Induced Rashba Spin-Orbit Torques in Multiferroic Semiconductor (Ge,Mn)Te

@misc{sadeghi2026laserinduced,
  title = {{Laser-Induced Rashba Spin-Orbit Torques in Multiferroic Semiconductor (Ge,Mn)Te}},
  author = {Zeynab Sadeghi and Tomas Ostatnicky and Eva Schmoranzerova and Jozef Kimak and Dominik Kriegner and Helena Reichlova and Lukas Nadvornik and Gunther Springholz and J. Hugo Dil and Juraj Krempasky and Petr Nemec},
  howpublished = {arXiv},
  year = {2026},
  month = oct,
  doi = {10.48550/arxiv.2608.26364},
  eprint = {2608.26364},
  archivePrefix = {arXiv},
  url = {https://arxiv.org/abs/2608.26364},
  note = {CC BY 4.0},
}

TY  - UNPB
TI  - Laser-Induced Rashba Spin-Orbit Torques in Multiferroic Semiconductor (Ge,Mn)Te
AU  - Zeynab Sadeghi
AU  - Tomas Ostatnicky
AU  - Eva Schmoranzerova
AU  - Jozef Kimak
AU  - Dominik Kriegner
AU  - Helena Reichlova
AU  - Lukas Nadvornik
AU  - Gunther Springholz
AU  - J. Hugo Dil
AU  - Juraj Krempasky
AU  - Petr Nemec
PY  - 2026
DA  - 2026/10/29
PB  - arXiv
DO  - 10.48550/arxiv.2608.26364
UR  - https://arxiv.org/abs/2608.26364
AB  - The multiferroic semiconductor (Ge,Mn)Te exhibits ferroelectricity, strong Rashba spin-orbit coupling, and carrier-mediated magnetic order, making it a unique platform for exploring the interplay between electronic, structural, and magnetic degrees of freedom. In this study, we investigate the ultrafast magnetization dynamics of Ge0.85Mn0.15Te using time-resolved magneto-optical spectroscopy. By separating magnetic and nonmagnetic contributions in the transient response, we identify two distinct laser-induced magnetic phenomena, both arising from a photoinduced effective spin-orbit torque. Coherent magnetization precession is driven by a laser-induced increase in hole concentration, which modifies the occupation of Rashba split, spin-locked valence band states and shifts the position of the magnetic easy axis. The transient change in magnetic properties, observed as variations in the amplitude and coercive field of the pump-induced change in ellipticity hysteresis loops, is attributed to laser-induced modifications of the ferroelectric sublattice displacement, which affect the ferroelectric polarization and the associated Rashba spin-orbit interaction. While the first type of optical spin-orbit torque has already been observed in the diluted magnetic semiconductor (Ga,Mn)As, the second effect is unique to the multiferroic Rashba semiconductor (Ge,Mn)Te, opening new opportunities for all-optical manipulation of magnetic order and spin-orbit torque generation in spin-orbitronic devices.
ER  -