Laser-Induced Rashba Spin-Orbit Torques in Multiferroic Semiconductor (Ge,Mn)Te.
5 affiliations
- 1Faculty of Mathematics and Physics, Charles University, Prague, Czech Republic.
- 2Institute of Physics ASCR, v.v.i., Prague, Czech Republic.
- 3Institut für Halbleiter-Und Festkörperphysik, Johannes Kepler Universität, Linz, Austria.
- 4Institut de Physique, École Polytechnique Fédérale de Lausanne, Lausanne, Switzerland.
- 5Centre for Photon Science, Paul Scherrer Institut, Villigen, Switzerland.
Abstract
The multiferroic semiconductor (Ge,Mn)Te exhibits ferroelectricity, strong Rashba spin-orbit coupling, and carrier-mediated magnetic order, making it a unique platform for exploring the interplay between electronic, structural, and magnetic degrees of freedom. In this study, we investigate the ultrafast magnetization dynamics of Ge0.85Mn0.15Te using time-resolved magneto-optical spectroscopy. By separating magnetic and nonmagnetic contributions in the transient response, we identify two distinct laser-induced magnetic phenomena, both arising from a photoinduced effective spin-orbit torque. Coherent magnetization precession is driven by a laser-induced increase in hole concentration, which modifies the occupation of Rashba-split, spin-locked valence band states, and shifts the position of the magnetic easy axis. The transient change in magnetic properties, observed as variations in the amplitude and coercive field of the pump-induced change in ellipticity hysteresis loops, is attributed to laser-induced modifications of the ferroelectric sublattice displacement, which affect the ferroelectric polarization and the associated Rashba spin-orbit interaction. While the first type of optical spin-orbit torque has already been observed in the diluted magnetic semiconductor (Ga,Mn)As, the second effect is unique to the multiferroic Rashba semiconductor (Ge,Mn)Te, opening new opportunities for all-optical manipulation of magnetic order and spin-orbit torque generation in spin-orbitronic devices.
Versions
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BibTeX
@article{sadeghi2026laserinduced,
title = {{Laser-Induced Rashba Spin-Orbit Torques in Multiferroic Semiconductor (Ge,Mn)Te.}},
author = {Zeynab Sadeghi and Tomáš Ostatnický and Eva Schmoranzerová and Jozef Kimák and Dominik Kriegner and Helena Reichlová and Lukáš Nádvorník and Gunther Springholz and J Hugo Dil and Juraj Krempasky and Petr Němec},
journal = {Advanced science (Weinheim, Baden-Wurttemberg, Germany)},
year = {2026},
month = oct,
doi = {10.1002/advs.78355},
url = {https://europepmc.org/article/MED/42952134},
note = {CC BY},
}
RIS
TY - JOUR
TI - Laser-Induced Rashba Spin-Orbit Torques in Multiferroic Semiconductor (Ge,Mn)Te.
AU - Zeynab Sadeghi
AU - Tomáš Ostatnický
AU - Eva Schmoranzerová
AU - Jozef Kimák
AU - Dominik Kriegner
AU - Helena Reichlová
AU - Lukáš Nádvorník
AU - Gunther Springholz
AU - J Hugo Dil
AU - Juraj Krempasky
AU - Petr Němec
PY - 2026
DA - 2026/10/28
JO - Advanced science (Weinheim, Baden-Wurttemberg, Germany)
DO - 10.1002/advs.78355
UR - https://europepmc.org/article/MED/42952134
AB - The multiferroic semiconductor (Ge,Mn)Te exhibits ferroelectricity, strong Rashba spin-orbit coupling, and carrier-mediated magnetic order, making it a unique platform for exploring the interplay between electronic, structural, and magnetic degrees of freedom. In this study, we investigate the ultrafast magnetization dynamics of Ge0.85Mn0.15Te using time-resolved magneto-optical spectroscopy. By separating magnetic and nonmagnetic contributions in the transient response, we identify two distinct laser-induced magnetic phenomena, both arising from a photoinduced effective spin-orbit torque. Coherent magnetization precession is driven by a laser-induced increase in hole concentration, which modifies the occupation of Rashba-split, spin-locked valence band states, and shifts the position of the magnetic easy axis. The transient change in magnetic properties, observed as variations in the amplitude and coercive field of the pump-induced change in ellipticity hysteresis loops, is attributed to laser-induced modifications of the ferroelectric sublattice displacement, which affect the ferroelectric polarization and the associated Rashba spin-orbit interaction. While the first type of optical spin-orbit torque has already been observed in the diluted magnetic semiconductor (Ga,Mn)As, the second effect is unique to the multiferroic Rashba semiconductor (Ge,Mn)Te, opening new opportunities for all-optical manipulation of magnetic order and spin-orbit torque generation in spin-orbitronic devices.
SN - 2198-3844
ER -