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Peer-reviewedCC BYACS nano

Protected Metallic Edge States in a Graphene-Capped Quantum Spin Hall System.

  1. 1Institut für Physik, Technische Universität Chemnitz, Reichenhainer Str. 70, ChemnitzD-09126, Germany.
  2. 2Research Center for Materials, Architectures and Integration of Nanomembranes (MAIN), Chemnitz09126, Germany.
  3. 3TEM-Center, Chemnitz University of Technology, Erfenschlager Straße 73, ChemnitzD-09125, Germany.

Abstract

Epitaxial bismuthene on SiC(0001) hosts symmetry-protected metallic edge states within a large bulk band gap, establishing it as a promising two-dimensional topological insulator for high-temperature quantum spin Hall (QSH) transport. Here we realize bismuthene islands by intercalating Bi beneath zero-layer graphene on SiC(0001) followed by hydrogen treatment, yielding well-defined edge terminations. Spectroscopic measurements demonstrate the metallic edge states originating from the underlying bismuthene layer. The graphene overlayer interacts only weakly with the bismuthene, preserving its topological character while providing environmental protection. Overall, our results establish graphene-capped bismuthene as a robust and tunable platform for studying correlated quantum states, with the one-dimensional edge channels exhibiting signatures of electronic correlation effects.

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BibTeX
@article{ngo2026protected,
  title = {{Protected Metallic Edge States in a Graphene-Capped Quantum Spin Hall System.}},
  author = {Huu Thoai Ngo and Zamin Mamiyev and Niclas Tilgner and Andres David Peña Unigarro and Sibylle Gemming and Thomas Seyller and Christoph Tegenkamp},
  journal = {ACS nano},
  year = {2026},
  month = oct,
  doi = {10.1021/acsnano.6c14197},
  url = {https://europepmc.org/article/MED/42917224},
  note = {CC BY},
}
RIS
TY  - JOUR
TI  - Protected Metallic Edge States in a Graphene-Capped Quantum Spin Hall System.
AU  - Huu Thoai Ngo
AU  - Zamin Mamiyev
AU  - Niclas Tilgner
AU  - Andres David Peña Unigarro
AU  - Sibylle Gemming
AU  - Thomas Seyller
AU  - Christoph Tegenkamp
PY  - 2026
DA  - 2026/10/01
JO  - ACS nano
DO  - 10.1021/acsnano.6c14197
UR  - https://europepmc.org/article/MED/42917224
AB  - Epitaxial bismuthene on SiC(0001) hosts symmetry-protected metallic edge states within a large bulk band gap, establishing it as a promising two-dimensional topological insulator for high-temperature quantum spin Hall (QSH) transport. Here we realize bismuthene islands by intercalating Bi beneath zero-layer graphene on SiC(0001) followed by hydrogen treatment, yielding well-defined edge terminations. Spectroscopic measurements demonstrate the metallic edge states originating from the underlying bismuthene layer. The graphene overlayer interacts only weakly with the bismuthene, preserving its topological character while providing environmental protection. Overall, our results establish graphene-capped bismuthene as a robust and tunable platform for studying correlated quantum states, with the one-dimensional edge channels exhibiting signatures of electronic correlation effects.
SN  - 1936-0851
SN  - 1936-086X
ER  -