Frozen Epitaxial Strain in Complex Oxide Freestanding Membranes.
4 affiliations
- 1Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin53706, United States.
- 2Department of Physics, University of Wisconsin-Madison, Madison, Wisconsin53706, United States.
- 3Department of Physics, South Dakota School of Mines and Technology, Rapid City, South Dakota57701, United States.
- 4X-ray Science Division, Advanced Photon Source, Argonne National Laboratory, Lemont, Illinois60439, United States.
Abstract
Transition metal complex oxides exhibit a diverse array of emergent physical properties engineered through epitaxial strain. However, the interpretation of strain-driven phenomena is often obscured by structural modifications─particularly under in-plane tension─which can trigger unexpected departures from bulk behavior. Here, we report the observation of "frozen epitaxial strain" in complex oxide heterostructures, where epitaxial tensile strain induces a unit-cell volume expansion that remains locked even after complete substrate release. Using synchrotron X-ray diffraction, we quantify this irreversible structural response, demonstrating that the lattice fails to recover its bulk-like dimensions in the freestanding state. X-ray photoelectron spectroscopy and first-principles calculations reveal that this expansion is stabilized by a high density of tensile strain-promoted oxygen vacancies. These findings establish a fundamental link between epitaxial tension, defect chemistry, and structural "memory," providing critical design rules for the controlled fabrication of functional freestanding membranes and strain-engineered oxide electronics.
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BibTeX
@article{lenharth2026frozen,
title = {{Frozen Epitaxial Strain in Complex Oxide Freestanding Membranes.}},
author = {Paul Lenharth and Yuchuan Yao and Shihao Tu and Pratap Pal and Varun Nitin Mapara and Ruiqi Sun and Wuzhang Fang and Peyton Burden and Tula R Paudel and Jason Kawasaki and Uwe Bergmann and Hua Zhou and Yuan Ping and Chang-Beom Eom},
journal = {ACS nano},
year = {2026},
month = oct,
doi = {10.1021/acsnano.6c08965},
url = {https://europepmc.org/article/MED/42899757},
note = {CC BY},
}
RIS
TY - JOUR
TI - Frozen Epitaxial Strain in Complex Oxide Freestanding Membranes.
AU - Paul Lenharth
AU - Yuchuan Yao
AU - Shihao Tu
AU - Pratap Pal
AU - Varun Nitin Mapara
AU - Ruiqi Sun
AU - Wuzhang Fang
AU - Peyton Burden
AU - Tula R Paudel
AU - Jason Kawasaki
AU - Uwe Bergmann
AU - Hua Zhou
AU - Yuan Ping
AU - Chang-Beom Eom
PY - 2026
DA - 2026/10/01
JO - ACS nano
DO - 10.1021/acsnano.6c08965
UR - https://europepmc.org/article/MED/42899757
AB - Transition metal complex oxides exhibit a diverse array of emergent physical properties engineered through epitaxial strain. However, the interpretation of strain-driven phenomena is often obscured by structural modifications─particularly under in-plane tension─which can trigger unexpected departures from bulk behavior. Here, we report the observation of "frozen epitaxial strain" in complex oxide heterostructures, where epitaxial tensile strain induces a unit-cell volume expansion that remains locked even after complete substrate release. Using synchrotron X-ray diffraction, we quantify this irreversible structural response, demonstrating that the lattice fails to recover its bulk-like dimensions in the freestanding state. X-ray photoelectron spectroscopy and first-principles calculations reveal that this expansion is stabilized by a high density of tensile strain-promoted oxygen vacancies. These findings establish a fundamental link between epitaxial tension, defect chemistry, and structural "memory," providing critical design rules for the controlled fabrication of functional freestanding membranes and strain-engineered oxide electronics.
SN - 1936-0851
SN - 1936-086X
ER -