Inorganic Dual-Gate ZnO–Te Anti-Ambipolar Switches for Electrically Programmable Window Detection and Multi-Level Voltage Classification
- 1Graduate School of Semiconductor Technology, Pohang University of Science and Technology, Cheongam-ro 77, Nam-gu, Pohang 37673, Republic of Korea
- 2National Institute for Nanomaterials Technology, Pohang University of Science and Technology, Cheongam-ro 77, Nam-gu, Pohang 37673, Republic of Korea
- 3Department of Electrical Engineering, Pohang University of Science and Technology, Cheongam-ro 77, Nam-gu, Pohang 37673, Republic of Korea
Abstract
The anti-ambipolar switch (AAS) produces a bell-shaped (Λ) transfer characteristic that embeds two threshold edges within a single device; however, this feature has been utilized mainly for discrete logic and periodic signals, rather than for discriminating a continuous input against defined voltage thresholds. Herein, a dual-gate ZnO–Te AAS (DGAAS), combined with a load transistor into an AAS cell, functions as an electrically programmable window detector. The bounded conduction interval of its Λ-curve defines the detection window, and the top-gate bias relocates this window without changes to the circuit topology. Fabricated at ≤150 °C, the device translates its peak by 0.95 V per volt of top-gate bias, with a device-to-device standard deviation of 29.4 mV across 30 devices. A six-transistor window detector, comprising the AAS cell and an output buffer, replaces the two-comparator-and-AND structure of a conventional CMOS design, reducing the transistor count by 75–77%, and circuit simulations based on the measured cell characteristics show that three cells map a continuous analog input to a 2-bit digital output. These results indicate that the ZnO–Te DGAAS serves as a compact primitive for voltage-domain signal discrimination, connecting analog sensing and digital readout within a back-end-of-line (BEOL)-compatible process.
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BibTeX
@article{kim2026inorganic,
title = {{Inorganic Dual-Gate ZnO–Te Anti-Ambipolar Switches for Electrically Programmable Window Detection and Multi-Level Voltage Classification}},
author = {Byeong Gwan Kim and Jae Hyeon Jun and Jun-Hyeok Choi and Hyeon-Seok Shin and Jung-Hun Jo and Chan Bin Lee and Jun Young Hong and Jae Min Jo and Byoung Hun Lee},
journal = {Nanomaterials},
year = {2026},
month = nov,
doi = {10.3390/nano16211418},
url = {https://www.mdpi.com/2079-4991/16/21/1418},
note = {CC BY 4.0},
}
RIS
TY - JOUR
TI - Inorganic Dual-Gate ZnO–Te Anti-Ambipolar Switches for Electrically Programmable Window Detection and Multi-Level Voltage Classification
AU - Byeong Gwan Kim
AU - Jae Hyeon Jun
AU - Jun-Hyeok Choi
AU - Hyeon-Seok Shin
AU - Jung-Hun Jo
AU - Chan Bin Lee
AU - Jun Young Hong
AU - Jae Min Jo
AU - Byoung Hun Lee
PY - 2026
DA - 2026/11/04
JO - Nanomaterials
DO - 10.3390/nano16211418
UR - https://www.mdpi.com/2079-4991/16/21/1418
AB - The anti-ambipolar switch (AAS) produces a bell-shaped (Λ) transfer characteristic that embeds two threshold edges within a single device; however, this feature has been utilized mainly for discrete logic and periodic signals, rather than for discriminating a continuous input against defined voltage thresholds. Herein, a dual-gate ZnO–Te AAS (DGAAS), combined with a load transistor into an AAS cell, functions as an electrically programmable window detector. The bounded conduction interval of its Λ-curve defines the detection window, and the top-gate bias relocates this window without changes to the circuit topology. Fabricated at ≤150 °C, the device translates its peak by 0.95 V per volt of top-gate bias, with a device-to-device standard deviation of 29.4 mV across 30 devices. A six-transistor window detector, comprising the AAS cell and an output buffer, replaces the two-comparator-and-AND structure of a conventional CMOS design, reducing the transistor count by 75–77%, and circuit simulations based on the measured cell characteristics show that three cells map a continuous analog input to a 2-bit digital output. These results indicate that the ZnO–Te DGAAS serves as a compact primitive for voltage-domain signal discrimination, connecting analog sensing and digital readout within a back-end-of-line (BEOL)-compatible process.
SN - 2079-4991
ER -