Scaling nanoribbon transistors with monolayer transition metal dichalcogenides
15 affiliations
- 1Department of Electrical Engineering, Stanford University, Stanford, CA, USA. [email protected]
- 2Department of Electrical Engineering, Stanford University, Stanford, CA, USA. [email protected]
- 3Department of Microtechnology and Nanoscience, Chalmers University of Technology, Gothenburg, Sweden. [email protected]
- 4HORIBA Scientific, Novato, CA, USA
- 5Department of Materials Science & Engineering, Stanford University, Stanford, CA, USA
- 6Department of Electrical Engineering, Stanford University, Stanford, CA, USA
- 7Geballe Laboratory for Advanced Materials, Stanford University, Stanford, CA, USA
- 8Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, CA, USA
- 9Precourt Institute for Energy, Stanford University, Stanford, CA, USA
- 10Stanford Synchrotron Radiation Lightsource (SSRL), SLAC National Accelerator Laboratory, Menlo Park, CA, USA
- 11Department of Applied Physics, Stanford University, Stanford, CA, USA. [email protected]
- 12Department of Electrical Engineering, Stanford University, Stanford, CA, USA. [email protected]
- 13Department of Materials Science & Engineering, Stanford University, Stanford, CA, USA. [email protected]
- 14Precourt Institute for Energy, Stanford University, Stanford, CA, USA. [email protected]
- 15Stanford Synchrotron Radiation Lightsource (SSRL), SLAC National Accelerator Laboratory, Menlo Park, CA, USA. [email protected]
Abstract
Nanoscale transistors demand aggressive scaling of all channel dimensions—length, width and thickness. Two-dimensional semiconductors (2DS) provide the ultimate thickness limit, yet good device performance has largely remained restricted to micrometre-wide channels. Here we report monolayer 2DS nanoribbon transistors with both n- and p-type operation, fabricated by a top-down multipatterning process that includes ‘anchored’ contacts to limit nanoribbon delamination. This approach achieves channel lengths and widths down to 25–30 nm, with minimal edge degradation confirmed through nanoscale characterization, including tip-enhanced photoluminescence. Integrated with thin high- κ gate dielectrics, the devices deliver on-state currents up to 560, 420 and 130 µA µm −1 at a drain-to-source voltage of 1 V for n-type MoS 2 , n-type WS 2 and p-type WSe 2 , respectively. These results exceed prior single-gated 2DS nanoribbon reports, with WS 2 improving by more than two orders of magnitude, even for normally off (enhancement-mode) operation. Overall, these findings position top-down patterned 2DS nanoribbons as promising building blocks for future nanosheet transistor architectures.
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BibTeX
@article{pena2026scaling,
title = {{Scaling nanoribbon transistors with monolayer transition metal dichalcogenides}},
author = {Tara Peña and Anton E. O. Persson and Andrey Krayev and Ashildur Fridriksdottir and Haotian Su and Yuan-Mau Lee and Young Suh Song and Kathryn M. Neilson and Zhepeng Zhang and Anh Tuấn Hoàng and Jerry A. Yang and Lauren Hoang and Shan Xiang Wang and Andrew J. Mannix and Paul C. McIntyre and Eric Pop},
journal = {Nature Nanotechnology},
year = {2026},
month = jun,
doi = {10.1038/s41565-026-02161-w},
url = {https://doi.org/10.1038/s41565-026-02161-w},
note = {CC BY},
}
RIS
TY - JOUR
TI - Scaling nanoribbon transistors with monolayer transition metal dichalcogenides
AU - Tara Peña
AU - Anton E. O. Persson
AU - Andrey Krayev
AU - Ashildur Fridriksdottir
AU - Haotian Su
AU - Yuan-Mau Lee
AU - Young Suh Song
AU - Kathryn M. Neilson
AU - Zhepeng Zhang
AU - Anh Tuấn Hoàng
AU - Jerry A. Yang
AU - Lauren Hoang
AU - Shan Xiang Wang
AU - Andrew J. Mannix
AU - Paul C. McIntyre
AU - Eric Pop
PY - 2026
DA - 2026/06/01
JO - Nature Nanotechnology
DO - 10.1038/s41565-026-02161-w
UR - https://doi.org/10.1038/s41565-026-02161-w
AB - Nanoscale transistors demand aggressive scaling of all channel dimensions—length, width and thickness. Two-dimensional semiconductors (2DS) provide the ultimate thickness limit, yet good device performance has largely remained restricted to micrometre-wide channels. Here we report monolayer 2DS nanoribbon transistors with both n- and p-type operation, fabricated by a top-down multipatterning process that includes ‘anchored’ contacts to limit nanoribbon delamination. This approach achieves channel lengths and widths down to 25–30 nm, with minimal edge degradation confirmed through nanoscale characterization, including tip-enhanced photoluminescence. Integrated with thin high- κ gate dielectrics, the devices deliver on-state currents up to 560, 420 and 130 µA µm −1 at a drain-to-source voltage of 1 V for n-type MoS 2 , n-type WS 2 and p-type WSe 2 , respectively. These results exceed prior single-gated 2DS nanoribbon reports, with WS 2 improving by more than two orders of magnitude, even for normally off (enhancement-mode) operation. Overall, these findings position top-down patterned 2DS nanoribbons as promising building blocks for future nanosheet transistor architectures.
SN - 1748-3387
SN - 1748-3395
ER -